PS1

PS2

IN

GATE

OUT

IN

GATE

OUT

LM5050-1

LM5050-1

GND

GND

VS

VS

GND

OFF

OUT

IN

GATE

LM5050-1

Shutdown

GND

GND

VS

Low= FET On, High= FET Off

100:

0.1 PF

+5.0V to +75V

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Design

LM5050-1, LM5050-1-Q1

SNVS629E – MAY 2011 – REVISED DECEMBER 2015

LM5050-1/-Q1 High-Side OR-ing FET Controller

1 Features

3 Description

The LM5050-1/-Q1 High Side OR-ing FET Controller

1

•

Available in Standard and AEC-Q100 Qualified

operates in conjunction with an external MOSFET as

an ideal diode rectifier when connected in series with

a

power

source.

This

ORing

controller

allows

•

MOSFETs to replace diode rectifiers in power

distribution networks thus reducing both power loss

and voltage drops.

•

100-V Transient Capability

•

Charge Pump Gate Driver for External N-Channel

The LM5050-1/-Q1 controller provides charge pump

MOSFET

gate drive for an external N-Channel MOSFET and a

fast response comparator to turn off the FET when

•

Fast 50-ns Response to Current Reversal

current flows in the reverse direction. The LM5050-1/-

•

2-A Peak Gate Turnoff Current

Q1 can connect power supplies ranging from 5 V to

•

75 V and can withstand transients up to 100 V.

•

Package: SOT-6 (Thin SOT-23-6)

Device Information(1)

PART NUMBER

PACKAGE

BODY SIZE (NOM)

2 Applications

LM5050-1

Active

OR-ing

of

Redundant

(N+1)

Power

SOT (6)

2.90 mm × 1.60 mm

LM5050-1-Q1

Supplies

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

Full Application

Typical Redundant Supply Configuration

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.