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TLE9263QX bảng dữ liệu(PDF) 13 Page - Infineon Technologies AG |
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TLE9263QX bảng dữ liệu(HTML) 13 Page - Infineon Technologies AG |
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13 / 164 page ![]() TLE9263QX General Product Characteristics Data Sheet 13 Rev. 1.1, 2014-09-26 Notes 1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. ESD Susceptibility ESD Resistivity V ESD,11 -2 – 2 kV HBM3) P_4.1.17 ESD Resistivity to GND, HSx V ESD,12 -2 – 2 kV HBM3) P_4.1.18 ESD Resistivity to GND, CANH, CANL, LINx V ESD,13 -8 – 8 kV HBM4)3) P_4.1.19 ESD Resistivity to GND V ESD,21 -500 – 500 V CDM5) P_4.1.20 ESD Resistivity Pin 1, 12,13,24,25,36,37,48 (corner pins) to GND V ESD,22 -750 – 750 V CDM5) P_4.1.21 1) Not subject to production test, specified by design. 2) Applies only if WK1 and WK2 are configured as alternative HV-measurement function 3) ESD susceptibility, HBM according to ANSI/ESDA/JEDEC JS-001 (1.5 kΩ, 100 pF) 4) For ESD “GUN” Resistivity 6KV (according to IEC61000-4-2 “gun test” (150pF, 330Ω)), will be shown in Application Information and test report will be provided from IBEE 5) ESD susceptibility, Charged Device Model “CDM” EIA/JESD22-C101 or ESDA STM5.3.1 Table 1 Absolute Maximum Ratings1) (cont’d) T j = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note / Test Condition Number Min. Typ. Max. |
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