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AN2784 bảng dữ liệu(PDF) 20 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  Using the high-density STM32F10xxx FSMC peripheral to drive external memories
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AN2784 bảng dữ liệu(HTML) 20 Page - STMicroelectronics

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Interfacing with an 8-bit NAND Flash memory
AN2784
20/31
Doc ID 14779 Rev 4
4
Interfacing with an 8-bit NAND Flash memory
NAND Flash memories are accessed in accordance with a specific protocol. To write to or
read from the NAND Flash memory, it is necessary to:
1.
Send a command to the NAND Flash memory
2.
Send the address to write to or read from
3.
Read or write the data
The FSMC NAND banks are divides into three sections to allow the user to easily program
the NAND Flash memory: data section, address section, and command section.
Figure 9.
FSMC NAND bank sections
In fact, the three sections are the representation of the real NAND Flash memory. By writing
to any location in the command section, the user writes the command to the NAND Flash
memory. By writing to any location in the address section, the user specifies the address of
the read or write operation. Depending on the structure of the used NAND Flash memory,
four or five operations are required to write the address. By writing to or reading from any
location in the data section, the data are written to or read from the address previously sent
to the address section.
Command section
Address section
Data section
0x02 0000
0x03 FFFF
0x01 0000
0x00 0000
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