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AN2784 bảng dữ liệu(PDF) 12 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  Using the high-density STM32F10xxx FSMC peripheral to drive external memories
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AN2784 bảng dữ liệu(HTML) 12 Page - STMicroelectronics

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Interfacing with a nonmultiplexed, asynchronous 16-bit NOR Flash memory
AN2784
12/31
Doc ID 14779 Rev 4
To have a correct configuration of the FSMC timings, the timings have to take into account:
●
the maximum read/write access time
●
the different internal FSMC delays
●
the different internal memory delays
Hence, we have:
((ADDSET + 1) + (DATAST + 1)) × tHCLK = max (tWC)
DATAST × HCLK = tWP
For read access, DATAST must verify:
DATAST
(t
AVQV + tsu(Data_NE) + tv(A_NE))/tHCLK – ADDSET – 4
Table 3 gives the meanings and values of the NOR Flash memory parameters.
Using the memory timings in Table 3 and the STM32F10xCDE FSMC asynchronous timings
in Table 2, we can compute the following values:
●
For the M29W128 NOR Flash memory, the timings are:
–
Address setup time: 0x0
–
Data setup time: 0x5
●
For the S29GL128P NOR Flash memory, the timings are:
–
Address setup time: 0x2
–
Data setup time: 0x5
Note:
1
The S29GL128P NOR Flash memory timings are also valid for the M29W128 NOR Flash
memory.
Table 3.
NOR Flash memory timings
Symbols
Parameter
Value
Unit
M29W128xx70
S29GL128P90
tWC
Address valid to next address valid for write
operation
70
90
ns
tRC
Address valid to next address valid for read
access
70
90
ns
tWP
Write Enable low to Write Enable high
45
35
ns
tAVQV
Address valid to output valid
70
90
ns



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