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AN2647
Interfacing with asynchronous memory
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1.2.4
Memory bank read and writing timings
The EMI supports 4 external memory banks, up to 64Mbyte in each bank. Depending on the
address in the current bus cycle, the EMI activates one of the 4 chip selects (CS0-CS3) to
select the targeted device.
Every memory bank has its own set of bus configuration registers and therefore is
configured to have its own set of bus timing as well. Usually high speed device like SRAM
resides in one bank while slow Flash memory and I/O device reside in another bank. Bus
timing can be switched dynamically from one bank to the other bank.
1.3
EMI bus configuration examples
Table 5 lists all the configuration registers and control bits that you need to configure the
EMI bus for asynchronous mode. The multiplexed mode example is configured for the 10ns,
16-bit SRAM (IS61LV25616AL) in Figure 2. The non-multiplexed mode example is
configured for the 20ns, 8-bit SRAM (C1019CV33) in Figure 6. The timings in Table 5 are
based on a 96 MHz BCLK clock.
Table 5.
EMI Bus configuration examples for asynchronous memory devices
Configuration
register
Register bit
Multiplexed 16-bit bus
Non-Multiplexed 8-bit bus
Bit
Name
Bit
value
Function
Bit
value
Function
EMI_BCRx
17
SYNCWRITEDEV
0
Asynchronous
write device
0
Asynchronous write
device
9
SYNCREADDEV
0
Asynchronous
read device
0
Asynchronous read
device
8
BPM
0
Normal mode
(non-burst or page
mode)
0
Normal mode (non-
burst or page mode)
5:4
MW
01
16-bit data bus
width
00
8-bit data bus width
3WP
0
Bank not write
protected
0
Bank not write
protected
EMI_RCR
4:0
WSTRD
11
Read Wait State
10 ns access time
11
Read Wait State
20 ns access time
EMI_OECR
3:0
WSTOEN
10
EMI_RDn
assertion delay
00
EMI_RDn assertion
delay
EMI_WCR
4:0
WSTWR
11
Write Wait State
11
Write Wait State
EMI_WECR
3:0
WSTWEN
10
EMI_WRn
assertion delay
00
EMI_WRn assertion
delay
EMI_ICR
3:0
IDCY
11
Idle Cycle = 3
BCLK
11
Idle Cycle=3 BCLK
EMI_BRDCR
4:0
WSTBRD
00
Burst read wait
state=0
00
Burst read wait state=0



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