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AN4337 bảng dữ liệu(PDF) 4 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  power MOSFETs are considered rugged with respect to the avalanche
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Avalanche phenomenon in the flyback converter
AN4337
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DocID025012 Rev 1
2
Avalanche phenomenon in the flyback converter
Basically, the application designers don't allow the avalanche operation in a MOSFET
device; instead, the voltage across the drain-source is maintained at around 80-90% of
V(BR)DSS. However, in some cases greater voltage spikes can occur; one such example is
the flyback converter.
Figure 2. Flyback circuit schematic
In the flyback converter, the basic issue is the presence of various leakage inductance
points in the transformer. If the inductor energy is not properly clamped, during MOSFET
turn-off, the leakage inductance causes voltage overshoots that can exceed the V(BR)DSS
absolute maximum rating of the MOSFET device. In particular when the MOSFET turns off,
the magnetic fields collapse and the voltage across the inductances reverses because the
current cannot interrupt suddenly. Since the leakage inductance doesn't participate in this
energy transfer, it cannot find a circulating path and thus generates a large positive spike on
the MOSFET drain. Therefore, the drain-source voltage is Vds=Vleakage + Vin + Vflyback,
where Vflyback is the reflected output voltage.
In these conditions, if the avalanche phenomenon occurs, IAR avalanche current and EAS
avalanche energy needs to be monitored.
Below is a typical waveform of the avalanche phenomenon occurring in a flyback converter
during the start up phase.



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