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4 / 14 page ![]() Avalanche phenomenon in the flyback converter AN4337 4/14 DocID025012 Rev 1 2 Avalanche phenomenon in the flyback converter Basically, the application designers don't allow the avalanche operation in a MOSFET device; instead, the voltage across the drain-source is maintained at around 80-90% of V(BR)DSS. However, in some cases greater voltage spikes can occur; one such example is the flyback converter. Figure 2. Flyback circuit schematic In the flyback converter, the basic issue is the presence of various leakage inductance points in the transformer. If the inductor energy is not properly clamped, during MOSFET turn-off, the leakage inductance causes voltage overshoots that can exceed the V(BR)DSS absolute maximum rating of the MOSFET device. In particular when the MOSFET turns off, the magnetic fields collapse and the voltage across the inductances reverses because the current cannot interrupt suddenly. Since the leakage inductance doesn't participate in this energy transfer, it cannot find a circulating path and thus generates a large positive spike on the MOSFET drain. Therefore, the drain-source voltage is Vds=Vleakage + Vin + Vflyback, where Vflyback is the reflected output voltage. In these conditions, if the avalanche phenomenon occurs, IAR avalanche current and EAS avalanche energy needs to be monitored. Below is a typical waveform of the avalanche phenomenon occurring in a flyback converter during the start up phase. |
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