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28F016SA bảng dữ liệu(PDF) 49 Page - Intel Corporation |
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28F016SA bảng dữ liệu(HTML) 49 Page - Intel Corporation |
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49 / 55 page ![]() E 28F016SA 49 5.11 Erase and Word/Byte Write Performance, Cycling Performance and Suspend Latency(3) VCC = 3.3V ± 10%, VPP = 12.0V ± 0.6V, TA = 0 °C to +70°C Sym Parameter Notes Min Typ(1) Max Units Test Conditions Page Buffer Byte Write Time 2,4 3.26 Note 6 µs Page Buffer Word Write Time 2,4 6.53 Note 6 µs tWHRH1 Word/Byte Program Time 2 9 Note 6 µs tWHRH2 Block Program Time 2 0.6 2.1 sec Byte Prog. Mode tWHRH3 Block Program Time 2 0.3 1.0 sec Word Prog. Mode Block Erase Time 2 0.8 10 sec Full Chip Erase Time 2 25.6 sec Erase Suspend Latency Time to Read 7.0 µs Auto Erase Suspend Latency Time to Write 10.0 µs Erase Cycles 5 100,000 1,000,000 Cycles VCC = 5.0V ± 10%, VPP = 12.0V ± 0.6V, TA = 0 °C to +70°C Sym Parameter Notes Min Typ(1) Max Units Test Conditions Page Buffer Byte Write Time 2,4 2.76 Note 6 µs Page Buffer Word Write Time 2,4 5.51 Note 6 µs tWHRH1 Word/Byte Program Time 2 6 Note 6 µs tWHRH2 Block Program Time 2 0.4 2.1 sec Byte Prog. Mode tWHRH3 Block Program Time 2 0.2 1.0 sec Word Prog. Mode Block Erase Time 2 0.6 10 sec Full Chip Erase Time 2 19.2 sec Erase Suspend Latency Time to Read 5.0 µs Auto Erase Suspend Latency Time to Write 8.0 µs Erase Cycles 5 100,000 1,000,000 Cycles NOTES: 1. +25 °C, VCC = 3.3V or 5.0V nominal, VPP = 12.0V nominal, 10K cycles. 2. Excludes system-level overhead. 3. These performance numbers are valid for all speed versions. 4. This assumes using the full Page Buffer to data program to the flash memory (256 bytes or 128 words). 5. Typical 1,000,000 cycle performance assumes the application uses block retirement techniques. 6. This information will be available in a technical paper. Please call Intel’s Application Hotline or your local Intel Sales office for more information. |
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