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AT45DB021D bảng dữ liệu(PDF) 31 Page - List of Unclassifed Manufacturers

tên linh kiện AT45DB021D
Giải thích chi tiết về linh kiện  2-megabit 2.7V Minimum DataFlash
PDF  48 Pages
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nhà sản xuất  ETC2 [List of Unclassifed Manufacturers]
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AT45DB021D bảng dữ liệu(HTML) 31 Page - List of Unclassifed Manufacturers

Back Button AT45DB021D_13 Datasheet HTML 27Page - List of Unclassifed Manufacturers AT45DB021D_13 Datasheet HTML 28Page - List of Unclassifed Manufacturers AT45DB021D_13 Datasheet HTML 29Page - List of Unclassifed Manufacturers AT45DB021D_13 Datasheet HTML 30Page - List of Unclassifed Manufacturers AT45DB021D_13 Datasheet HTML 31Page - List of Unclassifed Manufacturers AT45DB021D_13 Datasheet HTML 32Page - List of Unclassifed Manufacturers AT45DB021D_13 Datasheet HTML 33Page - List of Unclassifed Manufacturers AT45DB021D_13 Datasheet HTML 34Page - List of Unclassifed Manufacturers AT45DB021D_13 Datasheet HTML 35Page - List of Unclassifed Manufacturers Next Button
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31
3638M–DFLASH–5/2013
AT45DB021D
Table 16-3.
AC Characteristics – RapidS/Serial Interface
Figure 16-1. Input Test Waveforms and Measurement Levels
tR, tF < 2ns (10% to 90%)
Symbol
Parameter
Min
Typ
Max
Units
fSCK
SCK Frequency
66
MHz
fCAR1
SCK Frequency for Continuous Array Read
66
MHz
fCAR2
SCK Frequency for Continuous Array Read (Low Frequency)
33
MHz
tWH
SCK High Time
6.8
ns
tWL
SCK Low Time
6.8
ns
tSCKR(1)
SCK Rise Time, Peak-to-Peak (Slew Rate)
0.1
V/ns
tSCKF(1)
SCK Fall Time, Peak-to-Peak (Slew Rate)
0.1
V/ns
tCS
Minimum CS High Time
50
ns
tCSS
CS Setup Time
5
ns
tCSH
CS Hold Time
5
ns
tSU
Data In Setup Time
2
ns
tH
Data In Hold Time
3
ns
tHO
Output Hold Time
0
ns
tDIS
Output Disable Time
27
35
ns
tV
Output Valid
6ns
tWPE
WP Low to Protection Enabled
1
μs
tWPD
WP High to Protection Disabled
1
μs
tEDPD
CS High to Deep Power-down Mode
3
μs
tRDPD
CS High to Standby Mode
35
μs
tXFR
Page to Buffer Transfer Time
200
μs
tcomp
Page to Buffer Compare Time
200
μs
tEP
Page Erase and Programming Time (256-/264-bytes)
14
35
ms
tP
Page Programming Time (256-/264-bytes)
2
4
ms
tPE
Page Erase Time (256-/264-bytes)
13
32
ms
tBE
Block Erase Time (2,048-2,112-bytes)
15
35
ms
tSE
Sector Erase Time (32,768-/33,792-bytes)
400
700
ms
tCE
Chip Erase Time
3.6
6
s
tRST
RESET Pulse Width
10
μs
tREC
RESET Recovery Time
1
μs
AC
DRIVING
LEVELS
AC
MEASUREMENT
LEVEL
0.45V
1.5V
2.4V



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