AT45DB021D_13 datasheet(23/48 Pages) ETC2

23 / 48 page

3638M–DFLASH–5/2013

AT45DB021D

12.2 Operation Mode Summary

The commands described previously can be grouped into four different categories to better describe which

commands can be executed at what times.

Group A commands consist of:

1. Main Memory Page Read

2. Continuous Array Read

3. Read Sector Protection Register

4. Read Sector Lockdown Register

5. Read Security Register

Group B commands consist of:

1. Page Erase

2. Block Erase

3. Sector Erase

4. Chip Erase

5. Main Memory Page to Buffer Transfer

6. Main Memory Page to Buffer Compare

7. Buffer to Main Memory Page Program with Built-in Erase

8. Buffer to Main Memory Page Program without Built-in Erase

9. Main Memory Page Program through Buffer

10. Auto Page Rewrite

Group C commands consist of:

1. Buffer Read

2. Buffer Write

3. Status Register Read

4. Manufacturer and Device ID Read

Group D commands consist of:

1. Erase Sector Protection Register

2. Program Sector Protection Register

3. Sector Lockdown

4. Program Security Register

If a Group A command is in progress (not fully completed), then another command in Group A, B, C, or D should

not be started. However, during the internally self-timed portion of Group B commands one through four, any

command in Group C can be executed. During the internally self-timed portion of Group B commands five through

ten, only Group C commands three and four can be executed. Finally, during the internally self-timed portion of a

Group D command, only the Status Register Read command should be executed.

AT45DB021D bảng dữ liệu(PDF) 23 Page - List of Unclassifed Manufacturers