MPC8358ECVRADDDA datasheet(20/102 Pages) FREESCALE

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MPC8360E/MPC8358E PowerQUICC II Pro Processor Revision 2.x TBGA Silicon Hardware Specifications, Rev. 5

Freescale Semiconductor

DDR and DDR2 SDRAM AC Electrical Characteristics

This table provides the DDR capacitance when GVDD(typ) = 2.5 V.

6.2

DDR and DDR2 SDRAM AC Electrical Characteristics

This section provides the AC electrical characteristics for the DDR and DDR2 SDRAM interface.

6.2.1

DDR and DDR2 SDRAM Input AC Timing Specifications

This table provides the input AC timing specifications for the DDR2 SDRAM interface when GVDD(typ) = 1.8 V.

Input high voltage

VIH

MVREF + 0.18

GVDD + 0.3

—

Input low voltage

VIL

–0.3

MVREF – 0.18

—

Output leakage current

IOZ

—±10

μA

Output high current (VOUT = 1.95 V)

IOH

–15.2

—

Output low current (VOUT = 0.35 V)

IOL

15.2

—

MVREF input leakage current

IVREF

—±10

μA—

Input current (0 V

≤VIN ≤OVDD)IIN

—±10

μA—

Notes:

1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times.

2. MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak

noise on MVREF may not exceed ±2% of the DC value.

3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be

equal to MVREF. This rail should track variations in the DC level of MVREF.

4. Output leakage is measured with all outputs disabled, 0 V

≤V

OUT ≤GVDD.

Table 17. DDR SDRAM Capacitance for GVDD(typ) = 2.5 V

Parameter/Condition

Symbol

Min

Max

Unit

Notes

Input/output capacitance: DQ, DQS

CIO

Delta input/output capacitance: DQ, DQS

CDIO

—0.5

Note:

1. This parameter is sampled. GVDD = 2.5 V ± 0.125 V, f = 1 MHz, TA = 25° C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V.

Table 18. DDR2 SDRAM Input AC Timing Specifications for GVDD(typ) = 1.8 V

At recommended operating conditions with GVDD of 1.8 V ± 5%.

Parameter

Symbol

Min

Max

Unit

Notes

AC input low voltage

VIL

—MVREF – 0.25

—

AC input high voltage

VIH

MVREF + 0.25

—

Table 16. DDR SDRAM DC Electrical Characteristics for GVDD(typ) = 2.5 V (continued)

Parameter/Condition

Symbol

Min

Max

Unit

Notes

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