STM32F100RC datasheet(54/98 Pages) STMICROELECTRONICS

54 / 98 page

Electrical characteristics

STM32F100xC, STM32F100xD, STM32F100xE

54/98

Doc ID 15081 Rev 7

5.3.9

Memory characteristics

Flash memory

The characteristics are given at TA = –40 to 105 °C unless otherwise specified.

5.3.10

FSMC characteristics

Asynchronous waveforms and timings

Figure 15 through Figure 18 represent asynchronous waveforms and Table 30 through

Table 33 provide the corresponding timings. The results shown in these tables are obtained

with the following FSMC configuration:

●

AddressSetupTime = 0

●

AddressHoldTime = 1

●

DataSetupTime = 1

Table 28.

Flash memory characteristics

Symbol

Parameter

Conditions

Min(1)

Guaranteed by design, not tested in production.

Typ

Max(1)

Unit

tprog

16-bit programming time

TA = –40 to +105 °C

52.5

µs

tERASE

Page (2 KB) erase time

TA = –40 to +105 °C

tME

Mass erase time

TA = –40 to +105 °C

IDD

Supply current

Read mode

fHCLK = 24 MHz, VDD = 3.3 V

Write / Erase modes

fHCLK = 24 MHz, VDD = 3.3 V

5mA

Power-down mode / Halt,

VDD = 3.0 to 3.6 V

µA

Vprog

Programming voltage

3.6

Table 29.

Flash memory endurance and data retention

Symbol

Parameter

Conditions

Value

Unit

Min(1)

Based on characterization not tested in production.

Typ

Max

NEND

Endurance

TA = –40 to +85 °C (6 suffix versions)

TA = –40 to +105 °C (7 suffix versions)

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

Cycling performed over the whole temperature range.

Years

1 kcycle(2) at TA = 105 °C

10 kcycles(2) at TA = 55 °C

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