M68HC08 datasheet(61/332 Pages) FREESCALE

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FLASH Memory

MC68HC908JB16 — Rev. 1.1

Technical Data

Freescale Semiconductor

FLASH Memory

4.4 FLASH Control Register

The FLASH control register (FLCR) controls FLASH program and erase

operation.

HVEN — High Voltage Enable Bit

This read/write bit enables high voltage from the charge pump to the

memory for either program or erase operation. It can only be set if

either PGM=1 or ERASE=1 and the sequence for erase or

program/verify is followed.

1 = High voltage enabled to array and charge pump on

0 = High voltage disabled to array and charge pump off

MASS — Mass Erase Control Bit

This read/write bit configures the memory for mass erase operation or

block erase operation when the ERASE bit is set.

1 = Mass Erase operation selected

0 = Block Erase operation selected

ERASE — Erase Control Bit

This read/write bit configures the memory for erase operation. This bit

and the PGM bit should not be set to 1 at the same time.

1 = Erase operation selected

0 = Erase operation not selected

PGM — Program Control Bit

This read/write bit configures the memory for program operation. This

bit and the ERASE bit should not be set to 1 at the same time.

1 = Program operation selected

0 = Program operation not selected

Address:

$FE08

Bit 7

654321

Bit 0

Read:

0000

HVEN

MASS

ERASE

PGM

Write:

Reset:

00000000

Unimplemented

Figure 4-2. FLASH Control Register (FLCR)

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