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54 / 97 page  P30 Datasheet August 2008 54 306666-12 14.2 DC Voltage Characteristics IPPE VPP Erase Current 0.05 0.10 0.05 0.10 mA VPP = VPPL, erase in progress 822 8 22 VPP = VPPH, erase in progress Notes: 1. All currents are RMS unless noted. Typical values at typical VCC, TC = +25 °C. 2. ICCS is the average current measured over any 5 ms time interval 5 µs after CE# is deasserted. 3. Sampled, not 100% tested. 4. ICCES is specified with the device deselected. If device is read while in erase suspend, current is ICCES plus ICCR. 5. ICCW, ICCE measured over typical or max times specified in Section 16.0, “Program and Erase Characteristics” on page 67. Table 27: DC Voltage Characteristics Sym Parameter CMOS Inputs (VCCQ = 1.7 V – 3.6 V) TTL Inputs (1) (VCCQ = 2.4 V – 3.6 V) Unit Test Condition Notes Min Max Min Max VIL Input Low Voltage 0 0.400.6 V 2 VIH Input High Voltage VCCQ – 0.4 V VCCQ 2.0 VCCQ V VOL Output Low Voltage - 0.1 - 0.1 V VCC = VCCMin VCCQ = VCCQMin IOL = 100 µA VOH Output High Voltage VCCQ – 0.1 - VCCQ – 0.1 - V VCC = VCCMin VCCQ = VCCQMin IOH = –100 µA VPPLK VPP Lock-Out Voltage - 0.4 - 0.4 V 3 VLKO VCC Lock Voltage 1.0 - 1.0 - V VLKOQ VCCQ Lock Voltage 0.9 - 0.9 - V Notes: 1. Synchronous read mode is not supported with TTL inputs. 2. VIL can undershoot to –0.4 V and VIH can overshoot to VCCQ + 0.4 V for durations of 20 ns or less. 3. VPP ≤ VPPLK inhibits erase and program operations. Do not use VPPL and VPPH outside their valid ranges. Table 26: DC Current Characteristics (Sheet 2 of 2) Sym Parameter CMOS Inputs (VCCQ = 1.7 V - 3.6 V) TTL Inputs (VCCQ = 2.4 V - 3.6 V) Unit Test Conditions Notes Typ Max Typ Max |
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