JS28F128P33TF70A datasheet(47/88 Pages) MICROCHIP

47 / 88 page

Datasheet

Jul 2011

Order Number:208034-04

P33-65nm SBC

14.2

DC Voltage Characteristics

IPPBC

VPP Blank Check

0.05

0.10

0.05

0.10

VPP = VPPL

VPP = VPPH

Notes:

All currents are RMS unless noted. Typical values at typical VCC, TC = +25 °C.

ICCS is the average current measured over any 5 ms time interval 5 µs after CE# is deasserted.

Sampled, not 100% tested.

ICCES is specified with the device deselected. If device is read while in erase suspend, current is ICCES plus ICCR.

ICCW, ICCE measured over typical or max times specified in Section 15.5, “Program and Erase

Characteristics” on page 58.

if VIN > VCC the input load current increases to 10µA max.

the IPPS, IPPWS, IPPES Will increase to 200µA when VPP/WP# is at VPPH.

Table 21: DC Voltage Characteristics

Sym

Parameter

CMOS Inputs

(VCCQ = 2.3 V – 3.6 V)

TTL Inputs (1)

(VCCQ = 2.4 V – 3.6 V)

Unit

Test Conditions

Notes

Min

Max

Min

Max

VIL

Input Low Voltage

-0.5

0.4

-0.5

0.6

VIH

Input High Voltage

VCCQ – 0.4

VCCQ + 0.5

2.0

VCCQ + 0.5

VOL

Output Low Voltage

0.2

VCC = VCC Min

VCCQ = VCCQ Min

IOL = 100 µA

VOH

Output High Voltage

VCCQ – 0.2

VCC = VCC Min

VCCQ = VCCQ Min

IOH = –100 µA

VPPLK

VPP Lock-Out Voltage

0.4

VLKO

VCC Lock Voltage

1.5

VLKOQ

VCCQ Lock Voltage

0.9

VPPL

VPP Voltage Supply

(Logic Level)

1.5

3.6

1.5

3.6

VPPH

Buffered Enhanced

Factory Programming

VPP

8.5

9.5

8.5

9.5

Notes:

Synchronous read mode is not supported with TTL inputs.

VIL can undershoot to –0.4 V and VIH can overshoot to VCCQ + 0.4 V for durations of 20 ns or less.

VPP ≤ VPPLK inhibits erase and program operations. Do not use VPPL and VPPH outside their valid ranges.

Table 20: DC Current Characteristics (Sheet 2 of 2)

Sym

Parameter

CMOS Inputs

(VCCQ =

2.3 V - 3.6 V)

TTL Inputs

(VCCQ =

2.4 V - 3.6 V) Unit

Test Conditions

Notes

Typ

Max

Typ

Max

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