STM32F103RCT6 datasheet(82/130 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F103xC, STM32F103xD, STM32F103xE

82/130

Doc ID 14611 Rev 8

Figure 41.

NAND controller waveforms for common memory write access

Table 40.

Switching characteristics for NAND Flash read and write cycles(1)

CL = 15 pF.

Symbol

Parameter

Min

Max

Unit

td(D-NWE)

(2)

Based on characterization, not tested in production.

FSMC_D[15:0] valid before FSMC_NWE high

5tHCLK + 12

tw(NOE)

(2)

FSMC_NOE low width

4tHCLK – 1.5 4tHCLK + 1.5

tsu(D-NOE)

(2)

FSMC_D[15:0] valid data before FSMC_NOE

high

th(NOE-D)

(2)

FSMC_D[15:0] valid data after FSMC_NOE high 7

tw(NWE)

(2)

FSMC_NWE low width

4tHCLK – 1

4tHCLK + 2.5

tv(NWE-D)

(2)

FSMC_NWE low to FSMC_D[15:0] valid

th(NWE-D)

(2)

FSMC_NWE high to FSMC_D[15:0] invalid

2tHCLK + 4ns

td(ALE-NWE)

(3)

Guaranteed by design, not tested in production.

FSMC_ALE valid before FSMC_NWE low

3tHCLK + 1.5

th(NWE-ALE)

(3) FSMC_NWE high to FSMC_ALE invalid

3tHCLK + 4.5

td(ALE-NOE)

(3)

FSMC_ALE valid before FSMC_NOE low

3tHCLK + 2

th(NOE-ALE)

(3)

FSMC_NWE high to FSMC_ALE invalid

3tHCLK + 4.5

tw(NWE)

th(NWE-D)

tv(NWE-D)

ai14913b

FSMC_NWE

FSMC_NOE

FSMC_D[15:0]

td(D-NWE)

ALE (FSMC_A17)

CLE (FSMC_A16)

FSMC_NCEx

Low

td(ALE-NWE)

th(NWE-ALE)

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