STM32F103RCT6 datasheet(62/130 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F103xC, STM32F103xD, STM32F103xE

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Doc ID 14611 Rev 8

5.3.8

PLL characteristics

The parameters given in Table 28 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 10.

5.3.9

Memory characteristics

Flash memory

The characteristics are given at TA = –40 to 105 °C unless otherwise specified.

Table 28.

PLL characteristics

Symbol

Parameter

Value

Unit

Min

Typ

Max(1)

Based on characterization, not tested in production.

fPLL_IN

PLL input clock(2)

Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with

the range defined by fPLL_OUT.

18.0

MHz

PLL input clock duty cycle

fPLL_OUT

PLL multiplier output clock

MHz

tLOCK

PLL lock time

200

µs

Jitter

Cycle-to-cycle jitter

300

Table 29.

Flash memory characteristics

Symbol

Parameter

Conditions

Min

Typ

Max(1)

Guaranteed by design, not tested in production.

Unit

tprog

16-bit programming time

TA = –40 to +105 °C

52.5

µs

tERASE Page (2 KB) erase time

TA = –40 to +105 °C

tME

Mass erase time

TA = –40 to +105 °C

IDD

Supply current

Read mode

fHCLK = 72 MHz with 2 wait

states, VDD = 3.3 V

Write mode

fHCLK = 72 MHz, VDD = 3.3 V

7mA

Erase mode

fHCLK = 72 MHz, VDD = 3.3 V

5mA

Power-down mode / Halt,

VDD = 3.0 to 3.6 V

µA

Vprog

Programming voltage

3.6

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