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STM32F102xB bảng dữ liệu(PDF) 28 Page - STMicroelectronics

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STM32F102xB bảng dữ liệu(HTML) 28 Page - STMicroelectronics

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Electrical characteristics
STM32F102x8, STM32F102xB
28/76
Doc ID 15056 Rev 4
5.3
Operating conditions
5.3.1
General operating conditions
5.3.2
Operating conditions at power-up / power-down
Subject to general operating conditions for TA.
Table 9.
Operating conditions at power-up / power-down
Table 8.
General operating conditions
Symbol
Parameter
Conditions
Min
Max
Unit
fHCLK
Internal AHB clock frequency
0
48
MHz
fPCLK1
Internal APB1 clock frequency
0
24
fPCLK2
Internal APB2 clock frequency
0
48
VDD
Standard operating voltage
2
3.6
V
VDDA
(1)
1.
When the ADC is used, refer to Table 45: ADC characteristics.
Analog operating voltage
(ADC not used)
Must be the same potential
as VDD
(2)
2.
It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV
between VDD and VDDA can be tolerated during power-up and operation.
23.6
V
Analog operating voltage
(ADC used)
2.4
3.6
VBAT
Backup operating voltage
1.8
3.6
V
P
D
Power dissipation at TA =
85 °C(3)
3.
If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 6.2: Thermal
characteristics on page 71).
LQFP48
363
mW
LQFP64
444
TA
Ambient temperature
Maximum power dissipation
–40
85
°C
Low power dissipation(4)
4.
In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see
Table 6.2: Thermal characteristics on page 71).
–40
105
°C
TJ
Junction temperature range
–40
105
°C
Symbol
Parameter
Conditions
Min
Max
Unit
tVDD
VDD rise time rate
0
∞
µs/V
VDD fall time rate
20
∞



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