ST10F276E datasheet(34/235 Pages) STMICROELECTRONICS

34 / 235 page

Internal Flash memory

ST10F276E

34/235

Doc ID 12303 Rev 3

4.3.8

Flash data register 1 high

4.3.9

Flash address register low

Table 13.

Flash data register 1 low

Bit

Function

DIN(15:0)

Data Input 15:0

These bits must be written with the Data to program the Flash with the following

operations: Word Program (32-bit), Double Word Program (64-bit) and Set Protection.

FDR1H (0x0E 000E)

FCR

Reset value: FFFFh

765

210

DIN31 DIN30 DIN29 DIN28 DIN27 DIN26 DIN25 DIN24 DIN23 DIN22 DIN21 DIN20 DIN19 DIN18 DIN17 DIN16

Table 14.

Flash data register 1 high

Bit

Function

DIN(31:16)

Data input 31:16

These bits must be written with the data to program the Flash with the following

operations: word program (32-bit), double word program (64-bit) and set protection.

FARL (0x0E 0010)

FCR

Reset value: 0000h

765

210

ADD15 ADD14 ADD13 ADD12 ADD11 ADD10 ADD9

ADD8

ADD7

ADD6

ADD5

ADD4

ADD3

ADD2

Reserved

Table 15.

Flash address register low

Bit

Function

ADD(15:2)

Address 15:2

These bits must be written with the address of the Flash location to program in the

following operations: word program (32-bit) and double word program (64-bit). In

double word program bit ADD2 must be written to ‘0’.

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