TPD1039F

2008-03-18

3

Characteristics

Symbol

Rating

Unit

Drain-source voltage

45

V

Drain current

1.5

A

Input voltage

−0.5 to 6

V

Power dissipation (Note 2-a)

1.1

W

Power dissipation (Note 2-b)

0.425

W

Single pulse active clamp capability

(Note 3)

20

mJ

Active clamp current

1.5

A

Repetitive active clamp capability

(Note 2-a) (Note 4)

0.11

mJ

Operating temperature

−40 to 85

°C

Channel temperature

150 (Note 5)

°C

Storage temperature

−55 to 150

°C

Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

113.5 (Note 2-a)

Thermal resistance, channel to ambient

294.0 (Note 2-b)

°C /W

Note 2:

2-a: glass epoxy board (a)

2-b: glass epoxy board (b

)

Note 3: Active clamp capability (single pulse) test condition

Note 4: Repetitive rating: Pulse width limited by maximum channel temperature

Note 5: Overtemperature protection is tripped at a channel temperature of 125°C.

Ensure that the channel temperature, Tch, does not exceed 125°C under the worst-case conditions.

FR-4

25.4×25.4×0.8

(unit: mm)

FR-4

25.4×25.4×0.8

(unit: mm)