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TPD1039F bảng dữ liệu(PDF) 4 Page - Toshiba Semiconductor

tên linh kiện TPD1039F
Giải thích chi tiết về linh kiện  Low-Side Power Switch for Motor, Solenoid and Lamp Drivers
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Trang chủ  http://www.semicon.toshiba.co.jp/eng
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TPD1039F bảng dữ liệu(HTML) 4 Page - Toshiba Semiconductor

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TPD1039F
2008-03-18
4
Electrical Characteristics (Tch = 25°C)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Drain-source clamp voltage
V (CL)DSS
-
VIN = 0 V, ID = 1 mA
45
-
-
V
High-level input voltage
VIH
1
VDS = 10 to 40 V, ID ≥ 1 A
3.5
-
6
Low-level input voltage
VIL
1
VDS = 10 to 40 V, ID ≤ 10μA
-
-
0.8
V
Drain cut-off current
IDSS
-
VIN = 0 V, VDS = 40 V
-
-
10
μA
High-level input current
IIH
-
VIN = 5 V, at normal operation
-
400
μA
Drain-source ON-resistance
RDS(ON)
-
VIN = 5 V, ID = 1 A
-
-
0.25
Protective circuit operation input
Voltage range
VIN(opr)
-
-
3.5
-
6
V
Overtemperature detection
(Note 6)
TOT
2
VIN = 5 V, VDD = 12 V
125
-
-
°C
Overcurrent detection
IOC
3
VIN = 5 V, VDS = 24 V
-
5
-
A
ton
-
15
-
Switching times
toff
4
VDD = 24 V, VIN = 0 V/5 V,
RL = 24Ω
-
45
-
μs
Drain-source diode forward
Voltage
VDSF
-
VIN = 0 V, IDR = 1.5 A
-
0.9
1.8
V
Note 6: Overtemperature protection is tripped at a channel temperature of 125°C.
Ensure that the channel temperature, Tch, does not exceed 125°C under the worst-case conditions.
This feature is intended to protect the device against damage. The device reliability is not guaranteed if the
device persists to remain overtemperature protection mode.
Test Circuit 1
H-level input voltage, L-level input voltage measuring circuit
Test circuit
Measured waveforms
Test Circuit 2
Overtemperature detection measuring circuit
Test circuit
Measured waveforms
1 A
VIH
VIN
ID
10
μA
VIL
TPD1039F
VDD = 10 to 40 V
IN
SOURCE
DRAIN
VIN
ID
TPD1039F
VDD = 12 V
RL = 1.2kΩ
IN
SOURCE
DRAIN
VIN = 5 V
11 V
TOT
VDS
Ta
Ta increase
12 V
0V
1 V
Ta decrease



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