IXDN0036 datasheet(15/41 Pages) IXYS

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ATAVRFBKIT / EVLD001 User Guide

5-15

7597A–AVR–02/06

Section 5

Device Design & Application

5.1

Magnetics

PFC – Power Factor Correction

Without going into the derivations of the formulas used, the inductor design is as

follows:

L = 1.4 * 90VAC * 25µS

= 700µH

4.5A peak

The ON time has been discussed earlier and the OFF time maximum will occur at high

line condition at the peak of the haversine. A 16mm core was chosen for the recom-

mended power density at 200mT and 50KHz.

5.2

IXYS

IXTP02N50D

DEPLETION

MODE MOSFET

USED AS

CURRENT

SOURCE

The IXYS IXTP02N50D depletion mode MOSFET is used in this circuit to provide power

and a start-up voltage to the Vcc pin of the IXI859 charge pump regulator. The

IXTP02N50D acts as a current source and self regulates as the source voltage rises

above the 15V zener voltage and causes the gate to become more negative than the

source due to the voltage drop across the source resistor. Enough energy is available

from the current source circuit during the conduction angles to keep the IXI859 (U1) pin

1 greater than 14VDC as required to enable the Under Voltage Lock Out (UVLO) cir-

cuitry in the IXI859.

5.3

IXYS IXD611

Half- bridge

MOSFET driver

The IXD611 half bridge driver includes two independent high speed drivers capable of

600mA drive current at a supply voltage of 15V. The isolated high side driver can with-

stand up to 650V on its output while maintaining its supply voltage through a bootstrap

diode configuration. In this ballast application, the IXD611 is used in a half bridge

inverter circuit driving two IXYS IXTP3N50P power MOSFETs. The inverter load con-

sists of a serie resonant inductor and capacitor to power the lamps. Filament power is

also provided by the load circuit and is wound on the same core as the resonant induc-

tor. Pulse width modulation (PWM) is not used in this application, instead the power is

varied and the dimming of the lamps is controlled through frequency variation. It is

important to note that pulse overlap, which could lead to the destruction of the two MOS-

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