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MSP430F4152IPM bảng dữ liệu(PDF) 49 Page - Texas Instruments |
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MSP430F4152IPM bảng dữ liệu(HTML) 49 Page - Texas Instruments |
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49 / 82 page ![]() MSP430F41x2 MIXED SIGNAL MICROCONTROLLER SLAS648E -- APRIL 2009 -- REVISED MARCH 2011 49 POST OFFICE BOX 655303 DALLAS, TEXAS 75265 electrical characteristics over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (continued) flash memory PARAMETER TEST CONDITIONS VCC MIN NOM MAX UNIT VCC(PGM/ ERASE) Program and Erase supply voltage 2.2 3.6 V fFTG Flash Timing Generator frequency 257 476 kHz IPGM Supply current from DVCC during program 2.5V/3.6V 3 5 mA IERASE Supply current from DVCC during erase 2.5V/3.6V 3 7 mA tCPT Cumulative program time seeNote1 2.5V/3.6V 10 ms tCMErase Cumulative mass erase time seeNote2 2.5V/3.6V 200 ms Program/Erase endurance 104 105 cycles tRetention Data retention duration TJ =25C 100 years tWord Word or byte program time 35 tBlock, 0 Block program time for 1st byte or word 30 tBlock, 1-63 Block program time for each additional byte or word see Note 3 21 t tBlock, End Block program end-sequence wait time seeNote3 6 tFTG tMass Erase Mass erase time 5297 tSeg Erase Segment erase time 4819 NOTES: 1. The cumulative program time must not be exceeded when writing to a 64--byte flash block. This parameter applies to all programming methods: individual word/byte write and block write modes. 2. The mass erase duration generated by the flash timing generator is at least 11.1 ms ( = 5297x1 / fFTG, max = 5297 x 1 / 476 kHz). To achieve the required cumulative mass erase time the Flash Controller’s mass erase operation can be repeated until this time is met. (A worst case minimum of 19 cycles is required.) 3. These values are hardwired into the Flash Controller’s state machine (tFTG =1/fFTG). JTAG and Spy-Bi-Wire interface PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT fSBW Spy-Bi-Wire input frequency 2.2 V/3 V 0 8 MHz tSBW,Low Spy-Bi-Wire low clock pulse length 2.2 V/3 V 0.025 15 us tSBW,En Spy-Bi-Wire enable time, TEST high to acceptance of first clock edge (see Note 1) 2.2 V/3 V 1 us tSBW,Ret Spy-Bi-Wire return to normal operation time 2.2 V/3 V 15 100 us f TCK input frequency (see Note 2) 2.2 V 0 5 MHz fTCK TCK input frequency (see Note 2) 3V 0 10 MHz RInternal Internal pulldown resistance on TEST 2.2 V/3 V 25 60 90 k NOTES: 1. Tools accessing the Spy-Bi-Wire interface need to wait for the maximum tSBW,En time after pulling the TEST/SBWCLK pin high before applying the first SBWCLK clock edge. 2. fTCK may be restricted to meet the timing requirements of the module selected. |
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