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AS4DDR32M72-8/XT bảng dữ liệu(PDF) 9 Page - Austin Semiconductor |
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AS4DDR32M72-8/XT bảng dữ liệu(HTML) 9 Page - Austin Semiconductor |
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9 / 19 page ![]() iiiiiPEM PEM PEM PEM PEM 2.4G 2.4G 2.4G 2.4G 2.4Gb SDRAM-DDR b SDRAM-DDR b SDRAM-DDR b SDRAM-DDR b SDRAM-DDR AS4DDR32M72PBG AS4DDR32M72PBG Rev. 1.2 06/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 Austin Semiconductor, Inc. NAME (FUNCTION) CS# RAS# CAS# WE# ADDR DESELECT (NOP)(9) H XXXX NO OPERATION (NOP) (9) L H H H X ACTIVE (Select bank and activate row) (3) L L H H Bank/Row READ (Select bank and column, and start READ burst) (4) L H L H Bank/Col WRITE (Select bank and column, and start WRITE burst) (4) L H L L Bank/Col BURST TERMINATE (8) L H H L X PRECHARGE (Deactivate row in bank or banks) (5) L L H L Code AUTO REFRESH or SELF REFRESH (Enter self refresh mode) (6,7) L L L H X LOAD MODE REGISTER (2) LLLL Op-Code TRUTH TABLE - DM OPERATION NAME (FUNCTION) DM DQs WRITE ENABLE (10) L Valid WRITE INHIBIT (10) H X TRUTH TABLE - COMMANDS (NOTE 1) NOTES: 1 . CKE is HIGH for all commands shown except SELF REFRESH. 2 . A0-12 define the op-code to be written to the selected Mode Register. BA0, BA1 select either the mode register (0, 0) or the extended mode register (1, 0). 3. A0-12 provide row address, and BA0, BA1 provide bank address. 4. A0-8 provide column address; A10 HIGH enables the auto precharge feature (non-persistent), while A10 LOW disables the auto precharge feature; BA0, BA1 provide bank address. 5. A10 LOW: BA0, BA1 determine the bank being precharged. A10 HIGH: All banks precharged and BA0, BA1 are “Don’t Care.” 6 . This command is AUTO REFRESH if CKE is HIGH; SELF REFRESH if CKE is LOW. 7 . Internal refresh counter controls row addressing; all inputs and I/Os are “Don’t Care” except for CKE. 8. Applies only to read bursts with auto precharge disabled; this command is undefined (and should not be used) for READ bursts with auto precharge enabled and for WRITE bursts. 9 . DESELECT and NOP are functionally interchangeable. 10. Used to mask write data; provided coincident with the corresponding data. READ The READ command is used to initiate a burst read access to an active row. The value on the BA0, BA1 inputs selects the bank, and the address provided on inputs A0- 9 selects the starting column location. The value on input A10 determines whether or not AUTO PRECHARGE is used. If AUTO PRECHARGE is selected, the row being accessed will be precharged at the end of the READ burst; if AUTO PRECHARGE is not selected, the row will remain open for subsequent accesses. WRITE The WRITE command is used to initiate a burst write access to an active row. The value on the BA0, BA1 inputs selects the bank, and the address provided on inputs A0- 9 selects the starting column location. The value on input A10 determines whether or not AUTO PRECHARGE is used. If AUTO PRECHARGE is selected, the row being accessed will be precharged at the end of the WRITE burst; if AUTO PRECHARGE is not selected, the row will remain open for subsequent accesses. Input data appearing on the D/Qs iswritten to the memory array subject to the DQM input logic level appearing coincident with the data. If a given DQM signal is registered LOW, the corresponding data will be written to memory; if the DQM signal is registered HIGH, the corresponding data inputs will be ignored, and a WRITE will not be executed to that byte/column location. PRECHARGE The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row access a specified time (tRP) after the PRECHARGE command is issued. Except in the case of concurrent auto precharge, where a READ or WRITE command to a different bank is allowed as long as it does not interrupt the data transfer in the current bank and does not violate any other timing parameters. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank is to be precharged, inputs BA0, BA1 select the bank. Otherwise BA0, BA1 are treated as “Don’t Care.” Once a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. A PRECHARGE command will be treated as a NOP if there is no open row in that bank (idle state), or if the previously open row is already in the process of precharging. |
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