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SH7052 bảng dữ liệu(PDF) 811 Page - Renesas Technology Corp |
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SH7052 bảng dữ liệu(HTML) 811 Page - Renesas Technology Corp |
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811 / 919 page ![]() 785 tosc1 tbmv tdwn VCC RES FWE Memory read mode Command wait state Auto-program mode Auto-erase mode Command wait state Normal/abnormal end decision Note: In modes other than auto-program mode and auto-erase mode, the FWE input pin should be driven low. Figure 21.28 Oscillation Stabilization Time, Boot Program Transfer Time, and Power-Down Sequence 21.11.9 Notes on Memory Programming 1. When programming addresses which have previously been programmed, carry out auto- erasing before auto-programming. 2. When performing programming using programmer mode on a chip that has been programmed/erased in an on-board programming mode, auto-erasing is recommended before carrying out auto-programming. Notes: 1. The flash memory is initially in the erased state when the device is shipped by Hitachi. For other chips for which the erasure history is unknown, it is recommended that auto- erasing be executed to check and supplement the initialization (erase) level. 2. Auto-programming should be performed once only on the same address block. Additional programming cannot be performed on previously programmed address blocks. |
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