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M32C/8B bảng dữ liệu(PDF) 361 Page - Renesas Technology Corp |
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M32C/8B bảng dữ liệu(HTML) 361 Page - Renesas Technology Corp |
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361 / 406 page ![]() Under development M32C/8B Group 24. Electrical Characteristics Preliminary specification Specifications in this manual are tentative and subject to change. REJ09B0450-0050 Rev.0.50 Oct 31, 2008 Page 344 of 385 Figure 24.5 VCC1 = VCC2 = 5 V Timing Diagram (3) VCC1=VCC2=5V Memory Expansion Mode and Microprocessor Mode (when accessing an external memory space) NOTES: 1. Values guaranteed only when the MCU is used stand-alone. A maximum of 35 ns is guaranteed for td(BCLK-AD) + tsu(DB-BCLK). 2. Varies with operation frequency: tac1(RD-DB) = (tcyc / 2 x m - 35) ns.max (if external bus cycle a φ + bφ, m = (b x 2) + 1) tac1(AD-DB) = (tcyc x n - 35) ns.max (if external bus cycle a φ + bφ, n = a + b) Read Timing (1 φ + 1φ Bus Cycle) Write Timing (1 φ + 1φ Bus Cycle) NOTES: 3. Varies with operation frequency: td(DB-WR) = (tcyc x m - 20) ns.min ( if external bus cycle a φ + bφ, m = b) th(WR-DB) = (tcyc / 2 - 10) ns.min th(WR-AD) = (tcyc / 2 - 10) ns.min th(WR-CS) = (tcyc / 2 - 10) ns.min tw(WR) = (tcyc / 2 x n - 15) ns.min ( if external bus cycle a φ + bφ, n = (b x 2) - 1) Measurement Conditions: - VCC1 = VCC2 = 4.2 to 5.5 V - Input high and low voltage: VIH = 2.5 V, VIL = 0.8 V - Output high and low voltage: VOH = 2.0 V, VOL = 0.8 V tcyc= 109 f(BCLK) BCLK CSi ADi BHE DBi th(BCLK-CS) -3ns.min td(BCLK-CS) 18ns.max(1) tcyc td(BCLK-AD) 18ns.max(1) th(WR-AD)(3) th(BCLK-WR) -5ns.min td(DB-WR)(3) th(BCLK-AD) -3ns.min td(BCLK-WR) 18ns.max tw(WR)(3) th(WR-DB)(3) th(WR-CS)(3) WR,WRL,WRH BCLK CSi ADi BHE RD DBi th(BCLK-CS) -3ns.min th(RD-CS) 0ns.min td(BCLK-CS) 18ns.max(1) tcyc td(BCLK-AD) 18ns.max(1) 18ns.max td(BCLK-RD) th(RD-AD) 0ns.min th(BCLK-RD) -5ns.min tac1(RD-DB)(2) tac1(AD-DB)(2) Hi-Z th(RD-DB) 0ns.min tsu(DB-BCLK) 26ns.min(1) th(BCLK-AD) -3ns.min |
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