M32CSLASH8B datasheet(346/406 Pages) RENESAS

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M32C/8B Group

24. Electrical Characteristics

Preliminary specification

Specifications in this manual are tentative and subject to change.

REJ09B0450-0050 Rev.0.50 Oct 31, 2008

Page 329 of 385

Table 24.4

Recommended Operating Conditions (3/3)

(VCC1 = VCC2 = 3.0 to 5.5 V, Topr = -20 to 85

°C unless otherwise specified)

VCC1 = 3.0 to 5.5V

Table 24.5

Flash Memory Electrical Characteristics (VCC1 = 3.0 V to 5.5 V, Topr = 0 to 60

°C

unless otherwise specified)

NOTES:

1. If erase and program endurance is n times (n = 100), each block can be erased n times. For example, if a 4-

Kbyte block A is erased after programming four-byte data 1,024 times, each to a different address, this counts

as one erase and program time. Data cannot be programmed to the same address more than once without

erasing the block (rewrite prohibited).

2. Prior to accessing registers FMR0 to FMR3 or to entering CPU rewrite mode (EW0, EW1 mode), set the CPU

clock frequency to 10 MHz or lower using bits MCD4 to MCD0 in the MCD register, and also set the PM12 bit in

the PM1 register to 1 (1 wait state).

Symbol

Parameter

Standard

Unit

Min.

Typ.

Max.

f(CPU)

CPU clock frequency

(same frequency as f(BCLK))

VCC1 = 3.0 to 5.5V

MHz

f(XIN)

Main clock input frequency

016

MHz

f(XCIN)

Sub clock frequency

32.768

kHz

f(Ring)

On-chip oscillator frequency

0.5

MHz

f(PLL)

PLL clock frequency

VCC1 = 3.0 to 5.5V

MHz

tsu(PLL)

Wait time to stabilize PLL frequency

synthesizer

VCC1 = 5.0V

VCC1 = 3.3V

Symbol

Parameter

Measurement Condition

Standard

Unit

Min.

Typ.

Max.

−

CPU clock frequency (in CPU rewrite mode)(2)

MHz

−

Erase and program endurance(1)

100

times

−

Program time (4 bytes) (Topr = 25

°C)

Other than Data flash

150

900

μs

Data flash

300

1700

−

Lock bit program time

Other than Data flash

500

μs

Data flash

140

1000

−

Block erase time (Topr = 25

°C)

4-Kbyte block

0.2

8-Kbyte block

0.2

64-Kbyte block

0.2

tps

Wait time to stabilize flash memory circuit

μs

−

Data hold time (Topr = -40 to 85

°C)

years

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