7516 datasheet(49/90 Pages) RENESAS

49 / 90 page

Rev.1.01

Jul 01, 2003

page 49 of 89

7516 Group

Table 13 Summary of M37516F8 (flash memory version)

FLASH MEMORY MODE

The M37516F8 (flash memory version) has an internal new

DINOR (DIvided bit line NOR) flash memory that can be rewritten

with a single power source when VCC is 5 V, and 2 power sources

when VPP is 5 V and VCC is 3.0-5.5 V in the CPU rewrite and stan-

dard serial I/O modes.

For this flash memory, three flash memory modes are available in

which to read, program, and erase: the parallel I/O and standard

serial I/O modes in which the flash memory can be manipulated

using a programmer and the CPU rewrite mode in which the flash

memory can be manipulated by the Central Processing Unit

(CPU).

Summary

Table 13 lists the summary of the M37516F8 (flash memory ver-

sion).

The flash memory of the M37516F8 is divided into User ROM area

and Boot ROM area as shown in Figure 57.

In addition to the ordinary User ROM area to store the MCU op-

eration control program, the flash memory has a Boot ROM area

that is used to store a program to control rewriting in CPU rewrite

and standard serial I/O modes. This Boot ROM area has had a

standard serial I/O mode control program stored in it when

shipped from the factory. However, the user can write a rewrite

control program in this area that suits the user’s application sys-

tem. This Boot ROM area can be rewritten in only parallel I/O

mode.

Item

Power source voltage

VPP voltage (For Program/Erase)

Flash memory mode

Erase block division

User ROM area

Boot ROM area

Program method

Erase method

Program/Erase control method

Number of commands

Number of program/Erase times

ROM code protection

Specifications

Vcc = 2.7– 5.5 V (Note 1)

Vcc = 2.7–3.6 V (Note 2)

4.5-5.5 V, f(XIN) = 8 MHz

3 modes (Parallel I/O mode, Standard serial I/O mode, CPU rewrite mode)

1 block (32 Kbytes)

1 block (4 Kbytes) (Note 3)

Byte program

Batch erasing

Program/Erase control by software command

6 commands

100 times

Available in parallel I/O mode and standard serial I/O mode

Notes 1: The power source voltage must be Vcc = 4.5–5.5 V at program and erase operation.

2: The power source voltage can be Vcc = 3.0–3.6 V also at program and erase operation.

3: The Boot ROM area has had a standard serial I/O mode control program stored in it when shipped from the factory. This Boot ROM area can be

rewritten in only parallel I/O mode.

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