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STM8AF51XX bảng dữ liệu(PDF) 71 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  Automotive 8-bit MCU, with up to 128 Kbytes Flash, EEPROM, 10-bit ADC, timers, LIN, CAN, USART, SPI, I2C, 3 V to 5.5 V
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STM8AF51XX bảng dữ liệu(HTML) 71 Page - STMicroelectronics

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STM8AF61xx, STM8AF51xx
Electrical characteristics
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11.3.4
Memory characteristics
RAM and hardware registers
Flash program memory/data EEPROM memory
General conditions: TA = -40 to 125 °C.
Table 28.
RAM and hardware registers
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode(1)
1.
Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
registers (only in halt mode). Guaranteed by design, not tested in production. refer to Table 18 on page 58
for the value of VIT-max
Halt mode (or reset)
1.8
V
Table 29.
Flash program memory/data EEPROM memory
Symbol
Parameter
Conditions
Min(1)
1.
Guaranteed by characterization, not tested in production.
Typ
Max
Unit
VDD
Operating voltage
(all modes, execution/write/erase)
fCPU ≤24 MHz
3.0
5.5
V
tprog
Standard programming time
(including erase) for byte/word/block
(1 byte/4 bytes/128 bytes)
66.6
ms
Fast programming time for 1 block
(128 bytes)
33.3
ms
terase
Erase time for 1 block (128 bytes)
3
3.3
ms
NRW
Program memory endurance
erase/write cycles(2)
2.
The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a
write/erase operation addresses a single byte.
TA = 25 °C
1 k
cycles
TA = 125 °C
100
Data memory endurance erase/write
cycles(2)
TA = 25 °C
300 k
TA = 125 °C
100 k
TA = 145 °C
80 k
tRET
Program memory after cycling
TA = 25 °C
40
years
TA = 55 °C
20
TA = 85 °C
10
Data memory retention after cycling at
the endurance limits (T, n)
Full temperature
range
1000
hours
tRETI
Intrinsic data retention
TA = 25 °C
40
years
TA = 55 °C
20
TA = 85 °C
10



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