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ML22Q533 bảng dữ liệu(PDF) 10 Page - Rohm

tên linh kiện ML22Q533
Giải thích chi tiết về linh kiện  4-Channel Mixin g Speec h Synthesis LSIs with Built-in Flash M emor y fo r Automotive
PDF  178 Pages
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ML22Q533 bảng dữ liệu(HTML) 10 Page - Rohm

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FEDL22Q53X-02
ML22Q53X
■ Electrical characteristics
● Absolute maximum rating
DGND=SPGND=SPOGND=0V, Ta=25°C
Parameter
Symbol
Condition
Rating
Unit
Power supply voltage 1
DVDD
IOVDD
SPVDD
SPOVDD
—
-0.3 to +6.0
V
Power supply voltage 2
VDDR
—
-0.3 to +4.6
V
Input voltage 1
VIN1
—
-0.3 to DVDD+0.3
V
Input voltage 2
VIN2
—
-0.3 to IOVDD+0.3
V
Input voltage 3
VIN3
Applies to the FB1 and FB2
pins.
-0.3 to SPVDD+0.3
V
Allowable loss
PD
When the LSI is mounted on
JEDEC 4-layer board.
SPVDD = SPOVDD = 5V
1000
mW
Output short-circuit current
IOS
Applies to pins other than
SPM,SPP,VDDL and VDDR pins.
10
mA
Applies to SPM and SPP pins.
500
mA
Applies to the VDDL/VDDR pin.
50
mA
Storage temperature
TSTG
—
-55 to +150
°C
● Recommended operating conditions
DGND=SPGND=SPOGND=0V
Parameter
Symbol
Condition
Range
Unit
DVDD,
IOVDD,
SPVDD
*1, SPOV
DD
*1
Power-supply voltage
DVDD
IOVDD
SPVDD
SPOVDD
—
2.7 to 3.6 / 3.3 to 5.5
V
Operating temperature
Top
—
-40 to +105
°C
Master clock frequency
fOSC
—
Min.
Typ.
Max.
MHz
Typ
-5%
4.096
Typ
+5%
4.000
*1 SPVDD=SPOVDD≥DVDD
● Flash memory condition
Parameter
Symbol
Condition
Range
Unit
Operating temperature
TOP
At write/erase
0 to +70
°C
At read
-40 to +105
°C
Number of rewrites
CEP
―
100
Time
Data retention period
YDR
―
10
Year
10/178



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