6.5 Electrical Characteristics

At 1.04V ≤ VDD ≤ 6V, MR = Open, WDO pull-up resistor (Rpull-up) = 100kΩ to VDD, output load (CLOAD) = 10pF and over

operating free-air temperature range –40

℃ to 125℃, unless otherwise noted. VDD ramp rate ≤ 1V/µs. Typical values are at

TA = 25℃

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

COMMON PARAMETERS

VDD

Input supply voltage

Active LOW output

1.04

6

V

IDD

Supply current into VDD pin (1)

TA = –40℃ to 85℃

0.25

0.8

µA

0.25

3

VIL

Low level input voltage WD–EN, WDI,

SETx, MR (1)

0.3VDD

V

VIH

High level input voltage WD–EN, WDI,

SETx, MR (1)

0.7VDD

V

RMR

Manual reset internal pull-up resistance

100

kΩ

WDO (Open-drain active-low)

VOL

Low level output voltage

VDD =1.5V

IOUT(Sink) = 500µA

300

mV

VDD = 3.3V

IOUT(Sink) = 2mA

300

Ilkg(OD)

Open-Drain output leakage current

VDD = VPULLUP = 6V

TA = –40℃ to 85℃

10

30

nA

VDD = VPULLUP = 6V

10

60

nA

WDO (Push-pull active-low)

VPOR

Power on WDO voltage (2)

VOH(min) = 0.8 VDD

Iout (source) = 15µA

900

mV

VOL

Low level output voltage

VDD = 1.5V

IOUT(Sink) = 500µA

300

mV

VDD = 3.3V

IOUT(Sink) = 2mA

300

VOH

High level output voltage

VDD = 1.8V

IOUT(Source) = 500µA

0.8VDD

V

VDD = 3.3V

IOUT(Source) = 500µA

0.8VDD

VDD = 6V

IOUT(Source) = 2mA

0.8VDD

(1)

If the logic signal driving MR is less than VDD, then additional current flows into VDD and out of MR.

(2)

VPOR is the minimum VDD voltage level for a controlled output state

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TPS3435-Q1

SLVSGF0B – OCTOBER 2022 – REVISED MARCH 2025

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