RA4E2 datasheet(76/91 Pages) RENESAS

76 / 91 page

Table 2.44

Data flash memory characteristics (2 of 2)

Conditions: Program or erase: FCLK = 4 to 50 MHz

Read: FCLK ≤ 50 MHz

Parameter

Symbol

FCLK = 4 MHz

20 MHz ≤ FCLK ≤ 50 MHz

Unit

Test

conditions

Min

Typ*6 Max Min

Typ*6

Max

Second suspend delay during erasure in

suspend priority mode

64-byte

tDSESD2 —

—

300 —

—

300

µs

128-byte

—

390 —

—

390

256-byte

—

570 —

—

570

Suspend delay during erasing in erasure

priority mode

64-byte

tDSEED

—

300 —

—

300

µs

128-byte

—

390 —

—

390

256-byte

—

570 —

—

570

First erasing resume time during erasure in

suspend priority mode*5

tDREST1 —

—

300 —

—

300

µs

Second erasing resume time during erasure in

suspend priority mode

tDREST2 —

—

126 —

—

µs

Erasing resume time during erasure in erasure

priority mode

tDREET

—

126 —

—

µs

Forced stop command

tFD

—

µs

Data hold time*3

tDRP

10*3 *4

—

10*3 *4

—

Year

30*3 *4

—

30*3 *4

—

Ta = +85°C

Note 1. The reprogram/erase cycle is the number of erasures for each block. When the reprogram/erase cycle is n times (n = 125,000),

erasing can be performed n times for each block. For example, when 4-byte programming is performed 16 times for different

addresses in 64-byte blocks, and then the entire block is erased, the reprogram/erase cycle is counted as one. However,

programming the same address several times as one erasure is not enabled. Overwriting is prohibited.

Note 2. This is the minimum number of times to guarantee all the characteristics after reprogramming. The guaranteed range is from 1 to

the minimum value.

Note 3. This indicates the minimum value of the characteristic when reprogramming is performed within the specified range.

Note 4. This result is obtained from reliability testing.

Note 5. Time for resumption includes time for reapplying the erasing pulse (up to one full pulse) that was cut off at the time of suspension.

Note 6. The reference value at VCC = 3.3 V and room temperature.

2.10.3

Option Setting Memory Characteristics

Table 2.45

Option setting memory characteristics

Conditions: Program: FCLK = 4 to 50 MHz

Read: FCLK ≤ 50 MHz

Parameter

Symbol

FCLK = 4 MHz

20 MHz ≤ FCLK ≤ 50 MHz

Unit

Test conditions

Min

Typ*4

Max

Min

Typ*4

Max

Programming time

NOPC ≤ 100 times

tOP

—

309

—

162

Programming time

NOPC > 100 times

tOP

—

100

371

—

195

Reprogramming cycle

NOPC

20000*1 —

—

20000*1 —

—

Times

Data hold time*2

tDRP

10*2 *3

—

10*2 *3

—

Years

30*2 *3

—

30*2 *3

—

Ta = +85°C

Note 1. This is the minimum number of times to guarantee all the characteristics after reprogramming. The guaranteed range is from 1 to

the minimum value.

Note 2. This indicates the minimum value of the characteristic when reprogramming is performed within the specified range.

Note 3. This result is obtained from reliability testing.

Note 4. The reference value at VCC = 3.3 V and room temperature.

RA4E2 Datasheet

2. Electrical Characteristics

R01DS0413EJ0150 Rev.1.50

May 29, 2026

Page 76 of 91

RA4E2 bảng dữ liệu(PDF) 76 Page - Renesas Technology Corp

RA4E2 bảng dữ liệu(HTML) 76 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91

bảng dữ liệu tải về

Link URL