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RA4E1 bảng dữ liệu(PDF) 25 Page - Renesas Technology Corp |
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RA4E1 bảng dữ liệu(HTML) 25 Page - Renesas Technology Corp |
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25 / 81 page ![]() Table 2.10 Rising and falling gradient and ripple frequency characteristics The ripple voltage must meet the allowable ripple frequency fr (VCC) within the range between the VCC upper limit (3.6 V) and lower limit (2.7 V). When the VCC change exceeds VCC ±10%, the allowable voltage change rising and falling gradient dt/dVCC must be met. Parameter Symbol Min Typ Max Unit Test conditions Allowable ripple frequency fr (VCC) — — 10 kHz Figure 2.6 Vr (VCC) ≤ VCC × 0.2 — — 1 MHz Figure 2.6 Vr (VCC) ≤ VCC × 0.08 — — 10 MHz Figure 2.6 Vr (VCC) ≤ VCC × 0.06 Allowable voltage change rising and falling gradient dt/dVCC 1.0 — — ms/V When VCC change exceeds VCC ±10% Vr(VCC) VCC 1 / fr(VCC) Figure 2.6 Ripple waveform 2.2.7 Thermal Characteristics Maximum value of junction temperature (Tj) must not exceed the value of “section 2.2.1. Tj/Ta Definition”. Tj is calculated by either of the following equations. ● Tj = Ta + θja × Total power consumption ● Tj = Tt + Ψjt × Total power consumption – Tj : Junction Temperature (°C) – Ta : Ambient Temperature (°C) – Tt : Top Center Case Temperature (°C) – θja : Thermal Resistance of “Junction”-to-“Ambient” (°C/W) – Ψjt : Thermal Resistance of “Junction”-to-“Top Center Case” (°C/W) ● Total power consumption = Voltage × (Leakage current + Dynamic current) ● Leakage current of IO = Σ (IOL × VOL) /Voltage + Σ (|IOH| × |VCC – VOH|) /Voltage ● Dynamic current of IO = Σ IO (Cin + Cload) × IO switching frequency × Voltage – Cin: Input capacitance – Cload: Output capacitance Regarding θja and Ψjt, refer to Table 2.11. RA4E1 Datasheet 2. Electrical Characteristics R01DS0391EJ0130 Rev.1.30 Jun 6, 2025 Page 25 of 81 |
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