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AT25DF021A-DWFHT bảng dữ liệu(PDF) 44 Page - Renesas Technology Corp

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AT25DF021A-DWFHT bảng dữ liệu(HTML) 44 Page - Renesas Technology Corp

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DS-AT25DF021A-042 Rev. L
Page 44
8/7/23
© 2023 Renesas Electronics
AT25DF021A Datasheet
13. Electrical Specifications
13.3 DC Characteristics (-40°C to +85°C)
13.1 Absolute Maximum Ratings*
Temperature under Bias . . . . . . . -55
°C to +125°C
*Notice: Stresses beyond those listed under “Absolute
Maximum Ratings” can cause permanent
damage to the device. This is a stress rating only
and functional operation of the device at these or
any other conditions beyond those indicated in
the operational sections of this specification is
not implied. Exposure to absolute maximum
rating conditions for extended periods can affect
device reliability.
Storage Temperature. . . . . . . . . . -65
°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground. . . . . . . . . -0.6 V to +4.1 V
All Output Voltages
with Respect to Ground. . . . .-0.6 V to VCC + 0.5 V
13.2 DC and AC Operating Range
Operating Temperature (Case)
-40
°C to +85°C (VCC Power Supply 1.65 V to 3.6 V)
-40
°C to +125°C (VCC Power Supply 1.7 V to 3.6 V)
Symbol
Parameter
Condition
1.65 V to 3.6 V
2.3 V to 3.6 V
Units
Min
Typ
Max
Min
Typ
Max
IUDPD
Ultra-Deep Power-
Down Current
CS = VCC. All other inputs
at 0 V or VCC
0.2
0.6
0.35
0.6
µA
IDPD[1]
1. Max. specification is 20
µA @ 85°C
Deep Power-Down
Current
CS = VCC. All other inputs
at 0 V or VCC
4.5
15
5
15
µA
ISB
Standby Current
CS = VCC. All other inputs
at 0 V or VCC
25
40
25
40
µA
ICC1[2][3]
2. Typical values measured at 1.8 V @ 25°C for the 1.65 V to 3.6 V range.
3. Typical values measured at 3.0 V @ 25°C for the 2.3 V to 3.6 V range.
Active Current, Low
Power Read (03h,
0Bh) Operation
f = 1 MHz; IOUT = 0 mA
4.5
6
5
6
mA
f = 20 MHz; IOUT = 0 mA
5
7
6
7
mA
ICC2[2][3]
Active Current,
Read Operation
f = 50 MHz; IOUT = 0 mA
5
7
6
7
mA
f = 85 MHz; IOUT = 0 mA
5
7
6
7
mA
ICC3[2][3]
Active Current,
Program Operation
CS = VCC
11
14
12
14
mA
ICC4[2][3]
Active Current,
Erase Operation
CS = VCC
11
14
12
14
mA
ILI
Input Load Current
All inputs at CMOS levels
1
1
µA
ILO
Output Leakage
Current
All inputs at CMOS levels
1
1
µA
VIL
Input Low Voltage
VCC x 0.2
VCC x 0.3
V
VIH
Input High Voltage
VCC x 0.8
VCC x 0.7
V
VOL
Output Low Voltage
IOL = 100 µA
0.2
0.2
V
VOH
Output High Voltage
IOH = -100 µA
VCC - 0.2 V
VCC - 0.2V
V



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