VNH5019ATR-E datasheet(13/38 Pages) STMICROELECTRONICS

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VNH5019A-E

Electrical specifications

TTSD_LS

Low-side thermal

shutdown temperature

VIN = 0 V

150

175

200

°C

TTR(3)

Thermal reset temperature

135

°C

THYST(3)

Thermal hysteresis

°C

1. The device is able to pass the ESD and ISO pulse requirements as specified in the Table 15.

2. TTSD is the minimum threshold temperature between HS and LS

3. Valid for both HSD and LSD

Table 9. Protection and diagnostic (continued)

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

Table 10. Current sense (8 V < VCC < 21 V)

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

IOUT/ISENSE

IOUT = 3 A, VSENSE = 0.5 V,

Tj = - 40 °C to 150°C

4670

7110

10110

dK0/K0

Analog current sense ratio

drift

IOUT = 3 A; VSENSE = 0.5 V,

Tj = -40 °C to 150 °C

-19

IOUT/ISENSE

IOUT = 8 A,VSENSE = 1.3V,

Tj = - 40 °C to 150°C

6060

7030

8330

dK1/K1

Analog current sense ratio

drift

IOUT = 8 A; VSENSE = 1.3V,

Tj = -40 °C to 150 °C

-14

IOUT/ISENSE

IOUT = 15 AVSENSE = 2.4 V,

Tj = - 40 °C to 150°C

6070

6990

7810

dK2/K2

Analog current sense ratio

drift

IOUT = 15 A; VSENSE = 2.4 V,

Tj = -40 °C to 150 °C

-12

IOUT/ISENSE

IOUT = 25 AVSENSE = 4 V,

Tj = - 40 °C to 150°C

6000

6940

7650

dK3/K3

Analog current sense ratio

drift

IOUT =25 A; VSENSE = 4 V,

Tj = -40 °C to 150 °C

-12

VSENSE

Max analog sense output

voltage

IOUT = 15 A, RSENSE = 1.1 k

ISENSEO Analog sense leakage current

IOUT = 0 A, VSENSE = 0 V, VCSD = 5 V,

VIN = 0 V,

Tj = - 40 to 150°C

μA

IOUT = 0 A, VSENSE = 0 V, VCSD = 0 V,

VIN = 5 V,

Tj = - 40 to 150°C

100

tDSENSEH

Delay response time from

falling edge of CS_DIS pin

VIN = 5 V, VSENSE < 4 V, IOUT = 8 A,

ISENSE = 90% of ISENSEmax

(see fig Figure 13)

μs

tDSENSEL

Delay response time from

rising edge of CS_DIS pin

VIN = 5 V, VSENSE < 4 V, IOUT = 8 A,

ISENSE = 10% of ISENSEmax

(see fig Figure 13)

μs

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