5.4 Thermal Information

THERMAL METRIC

(1)

ISO7710

UNIT

DW (SOIC)

D(SOIC)

(16-Pin)

(8-Pin)

RθJA

Junction-to-ambient thermal resistance

94.4

146.1

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

57.3

63.1

°C/W

RθJB

Junction-to-board thermal resistance

57.1

80.0

°C/W

ψJT

Junction-to-top characterization parameter

40.0

9.6

°C/W

ψJB

Junction-to-board characterization parameter

56.8

79.0

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

—

—

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics

application note

5.5 Power Ratings

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

ISO7710

PD

Maximum power dissipation (both sides)

VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL =

15 pF, Input a 50-MHz 50% duty cycle

square wave

55

mW

PD1

Maximum power dissipation (side-1)

13

mW

PD2

Maximum power dissipation (side-2)

42

mW

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ISO7710

SLLSER9E – NOVEMBER 2016 – REVISED DECEMBER 2024

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