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SPSB100 bảng dữ liệu(PDF) 95 Page - STMicroelectronics

tên linh kiện SPSB100
Giải thích chi tiết về linh kiện  Automotive power management IC for highly integrated processors
PDF  213 Pages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
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SPSB100 bảng dữ liệu(HTML) 95 Page - STMicroelectronics

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Symbol
Parameter
Condition
Min Typ Max Unit
IOC_OUT_HS
Overcurrent threshold
VFBB = 13.5 V
25
33
40
mA
tOC_OUT_HS(1)
Overcurrent filter time
16
28
40
µs
tBLK_OC_OUT_HS(1)
Blanking time of
overcurrent
In case of short at enable (to be added to filter time
for the minimum tON)
32
46
60
µs
IOLD_OUT_HS
Open load detection
current
VFBB = 13.5 V
0.25 0.7
1.2
mA
tOLD_OUT_HS(1)
Open load detection time
45
70
95
µs
dVOUT_HS/dt
Slew rate
VFBB = 13.5 V
Rload = 620 Ω
Cload = 47 nF
from 20% to 80%
0.05 0.8
2
V/µs
tDON_OUT_HS
Switch ON delay time
VFBB = 13.5 V
(from CSN rising 50% to OUT 80%)
Rload = 620 Ω
Cload = 47 nF
5
20
40
µs
tDOFF_OUT_HS
Switch OFF delay time
VFBB = 13.5 V
(from CSN rising 50% to OUT 20%)
Rload = 620 Ω
Cload = 47 nF
10
60
100
µs
IQLH_OUT_HS_LP
Switched-off output
Current in low power
VOUT_HS = 0 V
Active low power or DEEP-SLEEP modes
-5
-
-
µA
IQLH_OUT_HS_FP
Switched-off output
Current in full power
VOUT_HS = 0 V
Active full power mode
-10
-
-
µA
1. Digital implementation is guaranteed by scan test.
7.13
NFSO1 fail safe output
The voltages are referred to GND and currents are assumed positive, when the current flows into the pin.
6.0 V ≤ VFBB ≤ 40 V, Tj = -40 °C to 150 °C, unless otherwise specified.
Table 34. Low side outputs
Symbol
Parameter
Condition
Min
Typ
Max
Unit
VNFSO1_L
Output low level
INFSO1 = 4 mA
-
-
0.5
V
INFSO1_LK
Tristate leakage current
VNFSO1 = 40 V
-
-
10
µA
tNFSO1_rt
Detection reaction time
-
-
200
µs
RNFSO1_PU
External pull-up resistor
-
30
-
kΩ
tNFSO_ECHO_FILT
Echo error filter time
On falling edge
91
100
150
µs
7.14
Wake up inputs (WU, IGN)
The voltages are referred to GND and currents are assumed positive, when the current flows into the pin.
6.0 V ≤ VFBB ≤ 29 V, Tj = -40 °C to 150 °C, unless otherwise specified.
Table 35. Wake-up Inputs
Symbol
Parameter
Condition
Min Typ Max Unit
VWUthp
Wake-up negative edge threshold voltage
Vthp min = VFBB * 0.4
Vthp typ = VFBB * 0.45
5.6 6.3
7
V
SPSB100
Electrical characteristics
DS14640 - Rev 2
page 95/213



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