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STM32G030F6 bảng dữ liệu(PDF) 44 Page - STMicroelectronics |
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STM32G030F6 bảng dữ liệu(HTML) 44 Page - STMicroelectronics |
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44 / 94 page ![]() Electrical characteristics STM32G030x6/x8 44/94 DS12991 Rev 1 Table 25. Current consumption in Run and Low-power run modes at different die temperatures Symbol Parameter Conditions Typ Max(1) Unit General fHCLK Fetch from(2) 25°C 85°C 25°C 85°C IDD(Run) Supply current in Run mode Range 1; PLL enabled; fHCLK = fHSI bypass (≤16 MHz), fHCLK = fPLLRCLK (>16 MHz); (3) 64 MHz Flash memory 5.7 5.9 8.0 8.3 mA 56 MHz 5.1 5.2 7.1 7.1 48 MHz 4.6 4.7 5.7 6.0 32 MHz 3.2 3.3 4.6 4.9 24 MHz 2.5 2.6 3.5 3.8 16 MHz 1.6 1.7 2.5 2.9 64 MHz SRAM 4.7 4.8 7.2 7.5 56 MHz 4.2 4.3 6.5 6.7 48 MHz 3.7 3.9 5.7 6.0 32 MHz 2.6 2.7 4.1 4.3 24 MHz 2.0 2.1 3.2 3.5 16 MHz 1.3 1.3 2.3 2.4 Range 2; PLL enabled; fHCLK = fHSI bypass (≤16 MHz), fHCLK = fPLLRCLK (>16 MHz); (3) 16 MHz Flash memory 1.3 1.3 2.0 2.3 8 MHz 0.7 0.8 1.4 1.5 2 MHz 0.3 0.3 0.6 0.9 16 MHz SRAM 1.1 1.1 1.9 2.1 8 MHz 0.6 0.6 1.2 1.4 2 MHz 0.2 0.3 0.6 0.9 IDD(LPRun) Supply current in Low-power run mode PLL disabled; fHCLK = fHSE bypass (> 32 kHz), fHCLK = fLSE bypass (= 32 kHz); (3) 2 MHz Flash memory 182 226 570 790 µA 1 MHz 99 132 480 700 500 kHz 58 89 430 630 125 kHz 25 56 370 600 32 kHz 17 47 330 480 2 MHz SRAM 161 191 550 800 1 MHz 91 114 470 750 500 kHz 48 81 410 710 125 kHz 21 51 360 500 32 kHz 15 37 310 400 1. Based on characterization results, not tested in production. 2. Prefetch and cache enabled when fetching from Flash 3. VDD = 3.0 V for values in Typ columns and 3.6 V for values in Max columns, all peripherals disabled, cache enabled, prefetch disabled for code and data fetch from Flash and enabled from SRAM |
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