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TAS5342LDDVR bảng dữ liệu(PDF) 10 Page - Texas Instruments |
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TAS5342LDDVR bảng dữ liệu(HTML) 10 Page - Texas Instruments |
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10 / 31 page ![]() www.ti.com ELECTRICAL CHARACTERISTICS TAS5342L SLAS558 – OCTOBER 2007 AUDIO SPECIFICATIONS (PBTL) (continued) Audio performance is recorded as a chipset consisting of a TAS5518 pwm processor (modulation index limited to 97.7%) and a TAS5342L power stage. PCB and system configuraton are in accordance with recommended guidelines. Audio frequency = 1kHz, PVDD_x = 32.0 V, GVDD_x = 12 V, RL = 3 Ω, fS = 384 kHz, ROC = 22 kΩ, TC = 75°C, Output Filter: LDEM = 10 μH, CDEM = 1.0 uF, unless otherwise noted. TAS5342L PARAMETER TEST CONDITIONS UNIT MIN TYP MAX PO = 0 W, all half bridges Pidle Power dissipation due to idle losses (IPVDD_X) 3 W switching(2) (2) Actual system idle losses are affected by core losses of output inductors. PVDD_x = 32.0 V, GVDD_X = 12 V, VDD = 12 V, TC (Case temperature) = 25°C, fS = 384 kHz, unless otherwise specified. TAS5342L PARAMETER TEST CONDITIONS UNIT MIN TYP MAX Internal Voltage Regulator and Current Consumption Voltage regulator, only used as a VREG VDD = 12 V 3 3.3 3.6 V reference node Operating, 50% duty cycle 7.1 17 IVDD VDD supply current mA Idle, reset mode 5.6 11 50% duty cycle 5.9 12 IGVDD_X Gate supply current per half-bridge mA Reset mode 1 1.8 50% duty cycle, without output filter or load 10.5 20 mA IPVDD_X Half-bridge idle current Reset mode, no switching 594 713 μA Output Stage MOSFETs Drain-to-source resistance, Low RDSon,LS TJ = 25°C, excludes metallization resistance, 110 125 m Ω Side Drain-to-source resistance, High RDSon,HS TJ = 25°C, excludes metallization resistance, 110 125 m Ω Side I/O Protection Undervoltage protection limit, Vuvp,G 9.5 V GVDD_X Vuvp,hyst (1) Undervoltage protection limit, 250 mV GVDD_X BSTuvpF Puts device into RESET when BST 6.11 V voltage falls below limit BSTuvpR Brings device out of RESET when 7.25 V BST voltage rises above limit OTW(1) Overtemperature warning 115 125 135 °C Temperature drop needed below OTWHYST (1) OTW temp. for OTW to be inactive 25 °C after the OTW event OTE(1) Overtemperature error threshold 145 155 165 °C OTE- OTE - OTW differential, temperature 30 °C OTWdifferential (1) delta between OTW and OTE OLPC Overload protection counter fS = 384 kHz 1.25 ms Resistor—programmable, high-end, IOC Overcurrent limit protection 7.9 8.4 A ROC = 22 kΩ with 1 ms pulse, TC= 75°C IOCT Overcurrent response time 150 ns tACTIVITY Time for PWM activity detector to Lack of transistion of any PWM input 13.2 μS DETECTOR activate when no PWM is present (1) Specified by design 10 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated Product Folder Link(s): TAS5342L Not Recommended for New Designs |
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