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STM32L412C8I6TR bảng dữ liệu(PDF) 131 Page - STMicroelectronics |
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STM32L412C8I6TR bảng dữ liệu(HTML) 131 Page - STMicroelectronics |
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131 / 192 page ![]() DS12469 Rev 4 131/192 STM32L412xx Electrical characteristics 163 All I/Os are CMOS- and TTL-compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements is shown in Figure 26 for standard I/Os, and in Figure 26 for 5 V tolerant I/Os. Figure 26. I/O input characteristics Output driving current The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or source up to ± 20 mA (with a relaxed VOL/VOH). 1. Refer to Figure 26: I/O input characteristics. 2. Tested in production. 3. Guaranteed by design. 4. This value represents the pad leakage of the IO itself. The total product pad leakage is provided by this formula: ITotal_Ileak_max = 10 µA + [number of IOs where VIN is applied on the pad] ₓ Ilkg(Max). 5. All FT_xx GPIOs except FT_u and PC3 I/O. 6. Max(VDDXXX) is the maximum value of all the I/O supplies. Refer to Table: Legend/Abbreviations used in the pinout table. 7. To sustain a voltage higher than Min(VDD, VDDA, VDDUSB) +0.3 V, the internal Pull-up and Pull-Down resistors must be disabled. 8. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimal (~10% order). |
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