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MPC8323ECVRADDC bảng dữ liệu(PDF) 14 Page - Freescale Semiconductor, Inc |
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MPC8323ECVRADDC bảng dữ liệu(HTML) 14 Page - Freescale Semiconductor, Inc |
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14 / 80 page ![]() MPC8323E PowerQUICC™ II Pro Integrated Communications Processor Family Hardware Specifications, Rev. 0 14 Freescale Semiconductor DDR1 and DDR2 SDRAM Table 13 provides the DDR2 capacitance when Dn_GVDD(typ) = 1.8 V. Table 14 provides the recommended operating conditions for the DDR1 SDRAM component(s) of the MPC8323E when Dn_GVDD(typ) = 2.5 V. Table 15 provides the DDR1 capacitance Dn_GVDD(typ) = 2.5 V. Table 13. DDR2 SDRAM Capacitance for D n _GVDD(typ) = 1.8 V Parameter/Condition Symbol Min Max Unit Notes Input/output capacitance: DQ, DQS CIO 68 pF 1 Delta input/output capacitance: DQ, DQS CDIO —0.5 pF 1 Note: 1. This parameter is sampled. D n _GV DD = 1.8 V ± 0.090 V, f = 1 MHz, TA = 25°C, VOUT = Dn_GVDD/2, VOUT (peak-to-peak) = 0.2 V. Table 14. DDR1 SDRAM DC Electrical Characteristics for D n _GVDD(typ) = 2.5 V Parameter/Condition Symbol Min Max Unit Notes I/O supply voltage D n _GV DD 2.375 2.625 V 1 I/O reference voltage MVREF nREF 0.49 × Dn_GVDD 0.51 × Dn_GVDD V2 I/O termination voltage VTT MVREF nREF – 0.04 MVREF nREF + 0.04 V 3 Input high voltage VIH MVREF nREF + 0.15 D n _GV DD + 0.3 V Input low voltage VIL –0.3 MVREF nREF – 0.15 V Output leakage current IOZ –9.9 –9.9 μA4 Output high current (VOUT = 1.95 V) IOH –16.2 — mA Output low current (VOUT = 0.35 V) IOL 16.2 — mA Notes: 1. D n _GV DD is expected to be within 50 mV of the DRAM Dn_GVDD at all times. 2. MVREF nREF is expected to be equal to 0.5 × Dn_GVDD, and to track Dn_GVDD DC variations as measured at the receiver. Peak-to-peak noise on MVREF nREF may not exceed ±2% of the DC value. 3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be equal to MVREF nREF. This rail should track variations in the DC level of MVREFnREF. 4. Output leakage is measured with all outputs disabled, 0 V ≤ VOUT ≤ Dn_GVDD. Table 15. DDR1 SDRAM Capacitance for D n _GVDD(typ) = 2.5 V Interface Parameter/Condition Symbol Min Max Unit Notes Input/output capacitance: DQ,DQS CIO 68 pF 1 Delta input/output capacitance: DQ, DQS CDIO —0.5 pF 1 Note: 1. This parameter is sampled. D n _GV DD = 2.5 V ± 0.125 V, f = 1 MHz, TA = 25°C, VOUT = Dn_GVDD/2, VOUT (peak-to-peak) = 0.2 V. |
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