S32K310 datasheet(46/143 Pages) NXP

46 / 143 page

Table 14. V11 regulator (NMOS ballast transistor control) electrical specifications

Symbol

Description

Min

Typ

Max

Unit

Condition

Spec

Number

V11

V11 output

—

1.155

—

VTH_NMOS

Vth of external

NMOS

—

1.5

For 3.3 V supply

—

VTH_NMOS

Vth of external

NMOS

—

For 5.0 V supply

—

IDS_NMOS

IDS of external

NMOS

—

tsettle_lm

Required setting

time from V11 in

FPM to load change

—

CNMOS

NMOS gate stability

capacitor

—

6.7 Supply currents

All data in this table is preliminary and based on first samples.

NOTE

Typical current numbers are indicative for typical silicon process and may vary based on the silicon distribution and user

configuration. Typical conditions assumes VDD_HV_A = VREFH = 5 V, VDD_HV_B = 5V (if the VDD_HV_B domain present in the

device), temperature = 25 °C, and typical silicon process unless otherwise stated. In STANDBY configuration, no current flows

through the V15 supply.

Table 15. STANDBY mode supply currents

Chip

Ambient Temperature (°C)

STANDBY 1

VDD_HV_A 2

VDD_HV_B 2

All clocks &

peripherals

OFF

(µA)

SIRC ON

(µA)

FIRC ON (24

MHz)

(mA)

All Config.

(µA)

S32K388

25, typ 3

TBD

25, max 4

TBD

85, typ 3

TBD

85, max 4

TBD

105, typ 3

TBD

105, max 4

TBD

Table continues on the next page...

NXP Semiconductors

Power management

S32K3xx Data Sheet, Rev. 9.1, 03/2024

Data Sheet: Technical Data

Preliminary Information for S32K388

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