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SPC58NG80C3 bảng dữ liệu(PDF) 26 Page - STMicroelectronics

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Electrical characteristics
SPC584Gx, SPC58EGx, SPC58NGx
26/139
DS11758 Rev 6
IDDSTBY8
CC
D
Total standby mode
current on VDD_LV and
VDD_HV supply, 8 KB
RAM(11)
TJ = 25 °C
145
380
µA
CTJ = 40 °C
550
DTJ = 55 °C
820
DTJ = 120 °C
4
mA
PTJ = 150 °C
8
IDDSTBY128
CC
D
Total standby mode
current on VDD_LV and
VDD_HV supply,
128 KB RAM(11)
TJ = 25 °C
170
530
µA
CTJ = 40 °C
790
µA
DTJ =55°C
1.2
mA
DTJ = 120 °C
5.5
PTJ = 150 °C
11
IDDSTBY256
CC
D
Total standby mode
current on VDD_LV and
VDD_HV supply,
256 KB RAM(11)
TJ = 25 °C
200
680
µA
CTJ =40°C
1.0
mA
DTJ =55°C
1.5
mA
DTJ = 120 °C
7
PTJ = 150 °C
14
IDDSSWU1
CC
D
SSWU running over all
STANDBY period with
OPC/TU commands
execution and keeping
ADC off(12)
TJ =40°C
1.0
3.5
mA
IDDSSWU2
CC
D
SSWU running over all
STANDBY period with
OPC/TU/ADC
commands execution
and keeping ADC
on(13)
TJ =40°C
3.5
5.0
mA
IDD_LV_BD
CC
P
Buddy Device
Consumption on
VDD_LV supply(14)
TJ = 150 °C
500
mA
IDD_HV_BD
CC
T
Buddy Device
Consumption on
VDD_HV supply(14)
130
mA
1. The ranges in this table are design targets and actual data may vary in the given range.
2. The leakage considered is the sum of core logic and RAM memories. The contribution of analog modules is not considered,
and they are computed in the dynamic IDD_LV and IDD_HV parameters.
3. IDD_LKG (leakage current) and IDD_LV (dynamic current) are reported as separate parameters, to give an indication of the
consumption contributors. The tests used in validation, characterization and production are verifying that the total
consumption (leakage+dynamic) is lower or equal to the sum of the maximum values provided (IDD_LKG +IDD_LV). The two
parameters, measured separately, may exceed the maximum reported for each, depending on the operative conditions and
the software profile used.
Table 9. Device consumption (continued)
Symbol
C
Parameter
Conditions
Value(1)
Unit
Min
Typ
Max



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