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FDMS3604S bảng dữ liệu(PDF) 9 Page - ON Semiconductor

tên linh kiện FDMS3604S
Giải thích chi tiết về linh kiện  MOSFET – N-Channel, POWERTRENCH, Power Stage, Asymetric Dual
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TYPICAL CHARACTERISTICS (Q2 N−CHANNEL)
TJ = 25°C Unless Otherwise Noted (continued)
Figure 20. Gate Charge Characteristics
Figure 21. Capacitance vs Drain to Source Voltage
Figure 22. Unclamped Inductive Switching
Capability
Figure 23. Maximum Continuous Drain Current
vs Case Temperature
Figure 24. Forward Bias Safe Operating Area
Figure 25. Single Pulse Maximum Power
Dissipation
01020304050
0
2
4
6
8
10
ID = 23 A
VDD = 20 V
VDD = 10 V
Qg, GATE CHARGE (nC)
VDD = 15 V
0.1
1
10
30
10
100
1000
10000
f = 1 MHz
VGS = 0 V
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
0.01
0.1
1
10
100
1000
1
10
50
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
25
50
75
100
125
150
0
40
80
120
160
RqJC = 2
oC/W
VGS = 4.5 V
Limited by Package
VGS = 10 V
T
C, CASE TEMPERATURE (
oC)
0.01
0.1
1
10
100200
0.01
0.1
1
10
100
200
DC
100 ms
10 ms
1 ms
1s
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RqJA = 120
oC/W
TA = 25
oC
10s
10
−3
10
−2
10
−1
110
100
1000
0.1
1
10
100
1000
SINGLE PULSE
RqJA = 120
oC/W
TA = 25
oC
t, PULSE WIDTH (sec)



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