FDMS3604S

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4

ELECTRICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted (continued)

Symbol

Units

Max

Typ

Min

Type

Column Head

Test Conditions

Parameter

DRAIN−SOURCE DIODE CHARACTERISTICS

VSD

Source to Drain Diode Forward

Voltage

VGS = 0 V, IS = 13 A (Note 2)

VGS = 0 V, IS = 23 A (Note 2)

Q1

Q2

0.8

0.8

1.2

1.2

V

trr

Reverse Recovery Time

Q1

IF = 13 A, di/dt = 100 A/ms

Q2

IF = 23 A, di/dt = 300 A/ms

Q1

Q2

25

32

40

51

ns

Qrr

Reverse Recovery Charge

Q1

Q2

9

39

18

62

nC

1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqJC is guaranteed

by design while RqCA is determined by the user’s board design.

a. 57 °C/W when mounted on

a 1 in2 pad of 2 oz copper

c. 125 °C/W when mounted on a

minimum pad of 2 oz copper

b. 50 °C/W when mounted on

a 1 in2 pad of 2 oz copper

d. 120 °C/W when mounted on a

minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.

3. As an N−ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

4. EAS of 40 mJ is based on starting TJ = 25°C; N−ch: L = 1 mH, IAS = 9 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 14 A.

5. EAS of 60 mJ is based on starting TJ = 25°C; N−ch: L = 1 mH, IAS = 11 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 18 A.