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FDMS3604S bảng dữ liệu(PDF) 8 Page - ON Semiconductor

tên linh kiện FDMS3604S
Giải thích chi tiết về linh kiện  MOSFET – N-Channel, POWERTRENCH, Power Stage, Asymetric Dual
PDF  16 Pages
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nhà sản xuất  ONSEMI [ON Semiconductor]
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FDMS3604S bảng dữ liệu(HTML) 8 Page - ON Semiconductor

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TYPICAL CHARACTERISTICS (Q2 N−CHANNEL)
TJ = 25°C Unless Otherwise Noted
Figure 14. On−Region Characteristics
Figure 15. Normalized On−Resistance vs Drain
Current and Gate Voltage
Figure 16. Normalized On−Resistance vs Junction
Temperature
Figure 17. On−Resistance vs Gate to Source
Voltage
Figure 18. Transfer Characteristics
Figure 19. Source to Drain Diode Forward Voltage
vs Source Current
0.0
0.2
0.4
0.6
0.8
1.0
0
20
40
60
80
100
VGS = 4.5 V
VGS = 3 V
VGS = 3.5 V
VGS = 4 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
VGS = 10 V
V
DS, DRAIN TO SOURCE VOLTAGE (V)
020406080
100
0
2
4
6
8
VGS = 3 V
VGS = 3.5 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
ID
, DRAIN CURRENT (A)
VGS = 4 V VGS = 4.5 V
VGS = 10 V
−75 −50 −25
0
25
50
75 100 125 150
0.8
1.0
1.2
1.4
1.6
ID = 23 A
VGS = 10 V
TJ
, JUNCTION TEMPERATURE (oC)
246810
0
3
6
9
12
TJ = 125 oC
ID = 23 A
TJ = 25 oC
VGS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
1.5
2.0
2.5
3.0
3.5
4.0
0
20
40
60
80
100
TJ = 125 oC
VDS = 5 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
TJ = −55oC
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0.01
0.1
1
10
100
TJ = −55oC
TJ = 25 oC
TJ = 125 oC
VGS = 0 V
VSD, BODY DIODE FORWARD VOLTAGE (V)
ms
ms
ms
ms



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