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MPFS250T-FCVG784I bảng dữ liệu(PDF) 10 Page - Microchip Technology

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Giải thích chi tiết về linh kiện  PolarFire SoC Advanced Datasheet
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nhà sản xuất  MICROCHIP [Microchip Technology]
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MPFS250T-FCVG784I bảng dữ liệu(HTML) 10 Page - Microchip Technology

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Unit
Max
Min
Symbol
Parameter
°C
150
–65
TSTG
Storage temperature
(ambient)
1
°C
135
–55
TJ
Junction temperature
1
°C
260
TSOLROHS
Maximum soldering
temperature RoHS
1. See FPGA Programming Cycles vs Retention Characteristics for retention time vs temperature. The total
time used in calculating the device retention includes the device operating temperature time and
temperature during storage time.
2. The power supplies for a given I/O bank x are shown as VDDIx and VDDAUXx.
5.2
Recommended Operating Conditions
The following table lists the recommended operating conditions.
Table 5 • Recommended Operating Conditions
Condition
Unit
Max
Typ
Min
Symbol
Parameter
V
1.03
1.00
0.97
VDD
Device core sup-
ply at 1.0 V
mode
1, 6
V
1.08
1.05
1.02
VDD
Device core sup-
ply at 1.05 V
mode
1, 6
When all lane
rates are 10.312
5 Gbps or less.
1
V
1.03
1.00
0.97
VDDA
Transceiver TX
and RX lanes
supply (1.0 V
mode)
6, 7
Must when any
lane rate is
V
1.08
1.05
1.02
VDDA
Transceiver TX
and RX lanes
greater than 10.
supply (1.05 V
mode)
6
3125 Gbps. L-
ane rates 10.31
25 Gbps or less
may also be
powered in 1.05
V mode.
1
V
1.89
1.80
1.71
VDD18
Programming
and HSIO receiv-
er supply
6
V
2.575
2.50
2.425
VDD25
Device core and
device PLL high-
voltage supply
6
V
2.575
2.50
2.425
VDDA25
Transceiver PLL
high-voltage
supply
6
6
Microsemi Proprietary and Confidential. DS0147 Revision 1.0
DC Characteristics



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