NVMJS1D7N04C datasheet(2/7 Pages) ONSEMI

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NVMJS1D7N04C

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 40 V

TJ = 25 °C

TJ = 125°C

100

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = 20 V

100

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 130 mA

2.5

3.5

Threshold Temperature Coefficient

VGS(TH)/TJ

−7.8

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V

ID = 50 A

1.36

1.7

Forward Transconductance

gFS

VDS =15 V, ID = 50 A

130

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz, VDS = 25 V

3300

Output Capacitance

COSS

1600

Reverse Transfer Capacitance

CRSS

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 20 V; ID = 50 A

Threshold Gate Charge

QG(TH)

VGS = 10 V, VDS = 20 V; ID = 50 A

Gate−to−Source Charge

QGS

Gate−to−Drain Charge

QGD

7.0

Plateau Voltage

VGP

4.7

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

td(ON)

VGS = 10 V, VDS = 20 V,

ID = 50 A, RG = 2.5 W

Rise Time

Turn−Off Delay Time

td(OFF)

Fall Time

8.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 50 A

TJ = 25°C

0.83

1.2

TJ = 125°C

0.7

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 50 A

Charge Time

Discharge Time

Reverse Recovery Charge

QRR

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

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