NVMJS1D7N04C datasheet(1/7 Pages) ONSEMI

tên linh kiện	NVMJS1D7N04C

Giải thích chi tiết về linh kiện	MOSFET ??Power, Single N-Channel 40 V, 1.7 m, 185 A

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July, 2019 − Rev. 1

1

Publication Order Number:

NVMJS1D7N04C/D

NVMJS1D7N04C

MOSFET – Power, Single

N-Channel

40 V, 1.7 mW, 185 A

Features

• Small Footprint (5x6 mm) for Compact Design

• Low RDS(on) to Minimize Conduction Losses

• Low QG and Capacitance to Minimize Driver Losses

• LFPAK8 Package, Industry Standard

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

40

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJC

(Notes 1, 3)

Steady

State

TC = 25°C

ID

185

A

TC = 100°C

131

Power Dissipation

RqJC (Note 1)

TC = 25°C

PD

106

W

TC = 100°C

53

Continuous Drain

Current RqJA

(Notes 1, 2, 3)

Steady

State

TA = 25°C

ID

35

A

TA = 100°C

25

Power Dissipation

RqJA (Notes 1, 2)

TA = 25°C

PD

3.8

W

TA = 100°C

1.9

Pulsed Drain Current

TA = 25°C, tp = 10 ms

IDM

900

A

Operating Junction and Storage Temperature

Range

TJ, Tstg

−55 to

+175

°C

Source Current (Body Diode)

IS

102

A

Single Pulse Drain−to−Source Avalanche

Energy (IL(pk) = 15 A)

EAS

338

mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State

RqJC

1.4

°C/W

Junction−to−Ambient − Steady State (Note 2)

RqJA

36

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

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V(BR)DSS

RDS(ON) MAX

ID MAX

40 V

1.7 mW @ 10 V

185 A

G (4)

S (1,2,3)

N−CHANNEL MOSFET

D (5,8)

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

MARKING

DIAGRAM

LFPAK8

CASE 760AA

1D7N04

C

AWLYW

G

S

DD D D

SS

1

1D7N04C = Specific Device Code

A

= Assembly Location

WL

= Wafer Lot

Y

= Year

W

= Work Week

Số phần tương tự - NVMJS1D7N04C

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
ON Semiconductor	NVMJS1D7N06C	258Kb / 6P	MOSFET - Power, Single N-Channel 60 V, 1.68 m, 224 A August, 2021 ??Rev. 1
ON Semiconductor	NVMJS1D7N06CTWG	258Kb / 6P	MOSFET - Power, Single N-Channel 60 V, 1.68 m, 224 A August, 2021 ??Rev. 1

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