PPC5605BAMLL4R datasheet(42/114 Pages) NXP

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MPC5607B Microcontroller Data Sheet, Rev. 10

Electrical characteristics

NXP Semiconductors

An approximate relationship between PD and TJ (if PI/O is neglected) is given by:

PD = K / (TJ + 273 °C)

Eqn. 2

Therefore, solving equations 1 and 2:

K = PD x (TA + 273 °C) + RθJA x PD

Eqn. 3

Where:

K is a constant for the particular part, which may be determined from Equation 3 by measuring

PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ may be

obtained by solving equations 1 and 2 iteratively for any value of TA.

4.6

I/O pad electrical characteristics

4.6.1

I/O pad types

The device provides four main I/O pad types depending on the associated alternate functions:

•

Slow pads—are the most common pads, providing a good compromise between transition time and

low electromagnetic emission.

•

Medium pads—provide transition fast enough for the serial communication channels with

controlled current to reduce electromagnetic emission.

•

Fast pads—provide maximum speed. These are used for improved Nexus debugging capability.

•

Input only pads—are associated with ADC channels and 32 kHz low power external crystal

oscillator providing low input leakage.

Medium and Fast pads can use slow configuration to reduce electromagnetic emission, at the cost of

reducing AC performance.

4.6.2

I/O input DC characteristics

Table 15 provides input DC electrical characteristics as described in Figure 6.

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