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STM32H750VB bảng dữ liệu(PDF) 124 Page - STMicroelectronics

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STM32H750VB bảng dữ liệu(HTML) 124 Page - STMicroelectronics

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Electrical characteristics (rev Y)
STM32H750VB STM32H750ZB STM32H750IB STM32H750XB
124/334
DS12556 Rev 5
6.3.11
Memory characteristics
Flash memory
The characteristics are given at TJ = –40 to 125 °C unless otherwise specified.
The devices are shipped to customers with the Flash memory erased.
Jitter
Cycle-to-cycle jitter(3)
-
VCO =
150 MHz
-145
-
+/-
ps
VCO =
300 MHz
-91
-
VCO =
400 MHz
-64
-
VCO =
420 MHz
-63
-
Period jitter
fPLL_OUT =
50 MHz
VCO =
150 MHz
-55
-
+/-
ps
VCO =
400 MHz
-30
-
Long term jitter
Normal mode
VCO =
150 MHz
--
-
%
VCO =
300 MHz
--
-
VCO =
400 MHz
-+/-0.3
-
I(PLL)(2)
PLL power consumption on VDD
VCO freq =
420MHz
VDD
-
440
1150
µA
VCORE
-
530
-
VCO freq =
150MHz
VDD
-
180
500
VCORE
-
200
-
1. Guaranteed by design unless otherwise specified.
2. Guaranteed by characterization results.
3. Integer mode only.
Table 49. PLL characteristics (medium VCO frequency range)(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 50. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IDD
Supply current
Write / Erase 8-bit mode
-
6.5
-
mA
Write / Erase 16-bit mode
-
11.5
-
Write / Erase 32-bit mode
-
20
-
Write / Erase 64-bit mode
-
35
-



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